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M58BW016BB100T6

STMicroelectronics

M58BW016BB100T6 by STMicroelectronics

M58BW016BB100T6 from STMicroelectronics is a 16Mb NOR Flash memory with a 3V nominal voltage, featuring an asynchronous operating mode. It supports industrial applications with a max temp of 85 °C and offers fast access times of 100 ns. This surface-mount device has a quad terminal form and is ideal for embedded systems requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,928 parts In-Stock

1+ parts

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1,928

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Digiode

USA . 1,751 parts In-Stock

1+ parts

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1,751

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Vyrian

USA . 938 parts In-Stock

1+ parts

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938

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,841 parts In-Stock

1+ parts

$4.433

100+ parts

-

1k+ parts

$3.989

10k+ parts

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1,841

$4.433

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$3.989

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MKK Technologies

India . 1,130 parts In-Stock

1+ parts

$8.335

100+ parts

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10k+ parts

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1,130

$8.335

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DigiPath Technology Company

USA . 1,130 parts In-Stock

1+ parts

$8.335

100+ parts

-

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10k+ parts

-

1,130

$8.335

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Parana Technologies

USA . 58 parts In-Stock

1+ parts

-

100+ parts

$5.300

1k+ parts

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58

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$5.300

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Corphita

USA . 55 parts In-Stock

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55

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Overview

Unlock a world of innovation with the M58BW016BB100T6 Flash Memory from STMicroelectronics, a leader in semiconductor technology. Designed for reliability and performance, this versatile memory solution thrives in demanding environments, offering exceptional temperature resilience and power efficiency. Perfect for industrial applications, it empowers your projects with fast access times and robust storage capabilities, ensuring you stay ahead in today's competitive landscape. Choose quality, choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy allows for durability and protection against environmental factors, enhancing the product's reliability.

Surface Mount: YES

Surface mount technology enables compact designs and easier integration into modern electronic circuits.

Package Shape: RECTANGULAR

A rectangular package shape is versatile and fits well in various electronic devices, maximizing space efficiency.

Operating Mode: ASYNCHRONOUS

Asynchronous operation offers fast access times, which is crucial for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V is standard for many applications, ensuring compatibility and wide usability.

Power Supplies (V): 2.5/3.3, 3/3.3

Multiple power supply options provide flexibility in different system designs and power availability.

No. of Terminals: 80

With 80 terminals, the device offers extensive connectivity options for various applications.

Package Style (Meter): FLATPACK

Flatpack style contributes to space-saving solutions in PCB design, enhancing aesthetic and layout considerations.

Maximum Operating Temperature: 85 °C

The high operating temperature tolerance ensures reliability in demanding industrial environments.

Organization: 512KX32

This memory organization offers a balanced performance, making it suitable for a variety of applications.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme temperatures (as low as -40 °C) makes the product ideal for harsh environments.

No. of Sectors/Size: 8,31

Having multiple sectors allows for efficient data management and storage organization.

Terminal Finish: TIN LEAD

Tin-lead finishes ensure good soldering performance and corrosion resistance, enhancing the longevity of connections.

Terminal Position: QUAD

Quad terminal positioning allows for better thermal dissipation and reduced electromagnetic interference (EMI).

Maximum Seated Height: 3.4 mm

A low maximum seated height ensures it can fit within tightly packed designs.

Width: 14 mm

The compact width contributes to space optimization on PCBs.

Minimum Supply Voltage (Vsup): 2.7 V

Supports a lower supply voltage, allowing for energy-efficient designs.

Type: NOR TYPE

NOR type architecture provides faster access times for read operations, making it suitable for code storage.

Common Flash Interface: YES

A common flash interface ensures compatibility with a wide range of processors and controllers.

Length: 20 mm

The standard length is manageable for a variety of circuit designs, facilitating integration.

Programming Voltage (V): 3

Operating at 3V for programming makes it easier to interface with modern logic levels.

Temperature Grade: INDUSTRIAL

Industrial temperature grading signifies durability and reliability in challenging conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, making it suitable for battery-powered applications.

Parallel or Serial: PARALLEL

Parallel operation provides quicker data transfers, which is essential for high-performance applications.

Terminal Form: GULL WING

Gull-wing terminals facilitate easy soldering and better adherence to PCB pads.

Sector Size (Words): 2K, 16K

Defined sector sizes enable efficient data management and flexible storage plans.

Maximum Supply Current: 30 mA

A maximum supply current of 30 mA helps maintain low power consumption for efficient energy use.

No. of Words: 524288 words

A large word count increases the data storage capacity, making it versatile for various applications.

Memory Width: 32

A 32-bit memory width enhances performance in processing tasks, ensuring faster data access.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for high pin density without compromising on soldering ease.

No. of Words Code: 512K

With 512K words available, this memory provides an ample space for diverse application requirements.

Command User Interface: YES

A user-friendly command interface simplifies programming and control, enhancing user experience.

Maximum Supply Voltage (Vsup): 3.6 V

A broad supply voltage range ensures flexibility across different system designs.

Boot Block: BOTTOM

Boot block configuration enhances security and efficiency for firmware storage.

Memory Density: 16777216 bit

High memory density allows for storing larger applications or data sets, making it highly functional.

Memory IC Type: FLASH

Being a flash memory type provides non-volatility, essential for data retention during power loss.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current contributes to energy efficiency, crucial for battery-operated devices.

Maximum Access Time: 100 ns

A fast access time of 100 ns allows for quicker data retrieval, improving overall system performance.

Technical Specifications

Flash Memory M58BW016BB100T6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQFP-G80

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Sectors/Size:

8,31

No. of Terminals:

80

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP80,.7X.9,32

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3,3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.4 mm

Sector Size (Words):

2K,16K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M58BW016BB100T6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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