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M58BW016BB100T3T

STMicroelectronics

M58BW016BB100T3T by STMicroelectronics

M58BW016BB100T3T from STMicroelectronics is a 16Mb NOR Flash memory with a 3.6V max supply voltage, operating in asynchronous mode. It features an automotive temperature grade and offers fast access times of 100 ns. Ideal for embedded applications, it ensures reliable performance across -40 °C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,246 parts In-Stock

1+ parts

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1,246

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Digiode

USA . 1,067 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,067

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Vyrian

USA . 530 parts In-Stock

1+ parts

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530

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 949 parts In-Stock

1+ parts

$3.391

100+ parts

-

1k+ parts

$3.052

10k+ parts

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949

$3.391

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$3.052

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MKK Technologies

India . 2,267 parts In-Stock

1+ parts

$6.377

100+ parts

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2,267

$6.377

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DigiPath Technology Company

USA . 2,267 parts In-Stock

1+ parts

$6.377

100+ parts

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2,267

$6.377

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Corphita

USA . 3,835 parts In-Stock

1+ parts

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3,835

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Parana Technologies

USA . 2,267 parts In-Stock

1+ parts

-

100+ parts

$4.055

1k+ parts

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2,267

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$4.055

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Overview

Unlock the power of innovation with the M58BW016BB100T3T from STMicroelectronics, a leader in high-quality flash memory solutions. Designed for automotive applications, this robust component ensures reliability even in extreme temperatures, offering seamless performance and efficiency. With its compact size and advanced technology, it delivers superior data storage capabilities, empowering your projects while saving space and energy. Trust in STMicroelectronics to elevate your designs with cutting-edge solutions!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this product suitable for automotive applications.

Surface Mount: YES

Surface mounting allows for compact designs and efficient use of PCB space, ideal for modern electronics.

Package Shape: RECTANGULAR

A rectangular package shape provides a standardized footprint for easy integration into various circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation minimizes timing issues in data transfer, leading to faster performance in data retrieval.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3V is typical for many systems, ensuring compatibility with standard electronic components.

Power Supplies (V): 2.5/3.3, 3/3.3

Multi-voltage power supply options increase flexibility and adaptability in a wider range of electronic applications.

No. of Terminals: 80

Having 80 terminals allows for greater input/output operations and connectivity with various devices.

Package Style (Meter): FLATPACK

Flatpack style enhances heat dissipation and supports high-density mounting, optimizing the circuit board layout.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature makes this flash memory suitable for harsh environments, particularly in automotive settings.

Organization: 512KX32

The 512KX32 organization provides a robust data structure, maximizing storage efficiency and access speed.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation in extreme cold environments, vital for automotive applications.

No. of Sectors/Size: 8,31

Having multiple sectors allows enhanced performance and data management, providing flexibility in how data is organized and accessed.

Terminal Finish: TIN LEAD

Tin lead finish contributes to excellent solderability, ensuring reliable connections during assembly.

Terminal Position: QUAD

Quad terminal positioning allows for efficient placement on PCBs, enhancing layout flexibility.

Maximum Seated Height: 3.4 mm

A low maximum seated height supports space-saving designs, essential for compact electronic devices.

Width: 14 mm

A 14 mm width strikes a balance between compactness and usability, fitting various design requirements.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V allows for operation in low-power applications, making it energy efficient.

Type: NOR TYPE

NOR type architecture enables random access and efficient reading/writing processes, enhancing performance.

Common Flash Interface: YES

A common flash interface ensures compatibility with a wide range of devices, simplifying integration.

Length: 20 mm

The 20 mm length facilitates easy mounting in a variety of electronic designs while optimizing layout space.

Programming Voltage (V): 3

A programming voltage of 3V aligns well with standard electronics, ensuring ease of integration.

Temperature Grade: AUTOMOTIVE

Designed for automotive use, this flash memory is built to endure demanding conditions, ensuring safety and reliability.

Technology: CMOS

CMOS technology reduces power consumption and increases speed, making this flash memory an efficient choice.

Parallel or Serial: PARALLEL

Parallel access allows for faster data operations, leading to improved system performance compared to serial interfaces.

Terminal Form: GULL WING

Gull wing terminals provide better mechanical stability and ease of soldering, ensuring robust connections.

Sector Size (Words): 2K, 16K

Variable sector sizes allow for tailored storage management, enhancing flexibility in data organization.

Maximum Supply Current: 30 mA

A maximum supply current of 30 mA ensures power efficiency while providing ample performance for data operations.

No. of Words: 524288 words

Offering 524288 words of memory provides significant storage capacity for various applications.

Memory Width: 32

A memory width of 32 bits allows for effective data handling, facilitating high-speed data processing.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch is ideal for compact designs, ensuring effective board space utilization.

No. of Words Code: 512K

The 512K words code indicates substantial storage capability, allowing for the management of large data sets.

Command User Interface: YES

A command user interface simplifies programming, making it easier for developers to implement.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V accommodates a wide range of power supply options, ensuring compatibility.

Boot Block: BOTTOM

A bottom boot block configuration enables optimized memory utilization, ensuring efficient firmware updates.

Memory Density: 16777216 bit

High memory density allows for extensive data storage, supporting complex applications and large data files.

Memory IC Type: FLASH

As a flash memory IC, this product offers non-volatile storage, ideal for applications that require persistent data retention.

Maximum Standby Current: 0.000005 Amp

Extremely low maximum standby current enhances energy efficiency, making it suitable for battery-operated devices.

Maximum Access Time: 100 ns

A maximum access time of 100 ns ensures quick data retrieval, improving system performance.

Technical Specifications

Flash Memory M58BW016BB100T3T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQFP-G80

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Sectors/Size:

8,31

No. of Terminals:

80

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP80,.7X.9,32

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3,3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.4 mm

Sector Size (Words):

2K,16K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M58BW016BB100T3T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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