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M34E02-FMB1G

STMicroelectronics

M34E02-FMB1G by STMicroelectronics

M34E02-FMB1G by STMicroelectronics is a compact EEPROM with a 2.5V nominal supply and I2C interface, ideal for low-power applications. It features 256x8 organization, 1M write/erase cycles, and operates in temperatures from 0 °C to 70 °C. Its small outline design ensures efficient space utilization in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,940 parts In-Stock

1+ parts

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2,940

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Anansix

USA . 2,668 parts In-Stock

1+ parts

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1k+ parts

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2,668

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Digiode

USA . 2,368 parts In-Stock

1+ parts

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2,368

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 229 parts In-Stock

1+ parts

$4.283

100+ parts

-

1k+ parts

$3.854

10k+ parts

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229

$4.283

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$3.854

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MKK Technologies

India . 2,053 parts In-Stock

1+ parts

$8.053

100+ parts

-

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10k+ parts

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2,053

$8.053

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DigiPath Technology Company

USA . 2,053 parts In-Stock

1+ parts

$8.053

100+ parts

-

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2,053

$8.053

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Corphita

USA . 4,550 parts In-Stock

1+ parts

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4,550

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Parana Technologies

USA . 1,734 parts In-Stock

1+ parts

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100+ parts

$5.120

1k+ parts

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1,734

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$5.120

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Overview

Unlock your project’s potential with the M34E02-FMB1G EEPROM from STMicroelectronics, renowned for quality and innovation. This compact memory solution offers reliable performance, supporting both hardware and software write protection to keep your data secure. With a wide operating voltage range and efficient power consumption, it’s perfect for a variety of applications—from consumer electronics to automotive systems. Experience durability with an impressive endurance of 1 million cycles, ensuring long-lasting reliability that drives your success.

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easier integration into compact electronic devices, making this EEPROM suitable for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient board layout and enhances reliability during soldering.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer rates, increasing overall system performance.

Nominal Supply Voltage (Vsup): 2.5 V

Operating at a nominal 2.5 V ensures lower power consumption, making this EEPROM energy-efficient.

Power Supplies (V): 1.8/3.3

Compatibility with both 1.8 V and 3.3 V power supplies provides flexibility to integrate into various systems.

No. of Terminals: 8

The 8-terminal design simplifies connections, contributing to efficient circuit layout and reduced footprint.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

A small outline and thin profile enable high-density PCB designs, making it a great choice for modern electronics.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in a variety of environmental conditions.

Organization: 256X8

The 256x8 organization provides a balanced structure for efficient data storage and retrieval.

Minimum Operating Temperature: 0 °C

Supports operation from 0 °C, making it suitable for standard temperature range applications.

I2C Control Byte: 1010DDDR

The I2C control byte allows for easy communication with microcontrollers and other devices via a widely used protocol.

Terminal Position: DUAL

Dual terminal positioning allows for versatile layout options on PCBs, enhancing design flexibility.

Write Protection: HARDWARE/SOFTWARE

Dual write protection ensures data integrity, safeguarding against accidental overwrites.

Maximum Seated Height: 0.6 mm

A low profile enhances design possibilities, fitting seamlessly into ultra-thin device constructions.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz allows for reliable serial communication and acceptable read/write speeds.

Width: 2 mm

A narrow width supports compact PCB designs, making it ideal for portable applications.

Minimum Supply Voltage (Vsup): 1.7 V

A low minimum supply voltage broadens the compatibility with battery-operated devices.

Length: 3 mm

Short length enables efficient use of space in modern electronic designs.

Temperature Grade: COMMERCIAL

Commercial-grade components are suitable for a wide range of everyday electronic applications.

Technology: CMOS

CMOS technology ensures low power consumption and high reliability, enhancing performance.

Parallel or Serial: SERIAL

Serial communication simplifies connections and reduces the number of I/O pins required, ideal for constrained designs.

Terminal Form: NO LEAD

No lead form enhances reliability and reduces the risk of solder joint failures.

Maximum Supply Current: 2 mA

With a maximum supply current of just 2 mA, this device consumes minimal power during operation.

No. of Words: 256 words

256 words of storage capacity strikes a balance between utility and cost for a range of applications.

Memory Width: 8

An 8-bit memory width is ideal for compact data representation in various microcontroller applications.

Minimum Data Retention Time: 40 years

A minimum data retention time of 40 years ensures that stored data remains intact for an extended period.

Terminal Pitch: 0.5 mm

The smaller terminal pitch allows for dense component layouts, making it suitable for high-performance electronics.

No. of Words Code: 256

Having 256 words available allows for sufficient data storage for small to moderate applications.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V ensures compatibility with a variety of systems and allows for margin in power supply variations.

Endurance: 1,000,000 Write/Erase Cycles

The high endurance rating ensures reliability and longevity of the device, suitable for frequent data updates.

Serial Bus Type: I2C

I2C serial bus type enables easy integration with microcontrollers and enhances multitasking capabilities in a system.

Maximum Write Cycle Time (tWC): 10 ms

A short write cycle time improves responsiveness and data processing efficiency in applications.

Memory Density: 2048 bit

The memory density of 2048 bits provides sufficient space without compromising on performance or cost.

Memory IC Type: EEPROM

As an EEPROM, this device allows for non-volatile storage, ensuring data persistence even when power is lost.

Maximum Standby Current: 0.000001 Amp

An extremely low maximum standby current means the device is ideal for low-power applications, enhancing battery life.

Technical Specifications

EEPROM M34E02-FMB1G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-XDSO-N8

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34E02-FMB1G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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