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M34E02-FMB1

STMicroelectronics

M34E02-FMB1 by STMicroelectronics

M34E02-FMB1 by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and I2C interface. It features a compact 8-terminal design, operates b/w 1.7V to 3.6V, and supports up to 1M write/erase cycles. Ideal for low-power applications in commercial environments.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 759 parts In-Stock

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759

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Vyrian

USA . 380 parts In-Stock

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380

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Anansix

USA . 379 parts In-Stock

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379

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,015 parts In-Stock

1+ parts

$2.251

100+ parts

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1k+ parts

$2.026

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1,015

$2.251

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$2.026

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MKK Technologies

India . 1,155 parts In-Stock

1+ parts

$4.233

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1,155

$4.233

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DigiPath Technology Company

USA . 1,155 parts In-Stock

1+ parts

$4.233

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1,155

$4.233

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Parana Technologies

USA . 2,326 parts In-Stock

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$2.692

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2,326

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$2.692

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Corphita

USA . 1,225 parts In-Stock

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1,225

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Overview

Unlock the potential of your designs with the M34E02-FMB1 EEPROM from STMicroelectronics, a leader in semiconductor innovation. This compact, high-performance memory solution is ideal for diverse applications, from consumer electronics to industrial automation. With robust endurance and exceptional reliability, it ensures data integrity while simplifying integration. Experience seamless operation with low power consumption and flexible interfacing—transforming your projects into success stories!

Feature Benefit Bullets

Surface Mount: YES

This surface mount capability allows for easy integration into compact designs, saving PCB space.

Package Shape: RECTANGULAR

The rectangular package shape is well-suited for efficient placement on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer speed and efficiency in data communication.

Nominal Supply Voltage / Vsup (V): 2.5

A nominal supply voltage of 2.5V makes this EEPROM compatible with a wide range of low-power applications.

Power Supplies (V): 1.8/3.3

Dual voltage operation (1.8V and 3.3V) offers flexibility in varying application environments.

No. of Terminals: 8

With 8 terminals, this device is easy to wire, simplifying connections in circuit designs.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

The small and thin package style ensures that it takes up minimal space on the PCB while maintaining good thermal characteristics.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C means suitability for a wide range of commercial applications.

Organization: 256X8

The memory organization of 256x8 provides ample storage capacity for various applications.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures reliable performance in a variety of environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers excellent solderability, ensuring strong connections during assembly.

I2C Control Byte: 1010DDDR

The I2C control byte indicates compatibility with the popular I2C communication protocol, making integration straightforward.

Terminal Position: DUAL

Dual terminal positioning facilitates easier layout on PCB, allowing for compact designs.

Write Protection: HARDWARE/SOFTWARE

Dual write protection (hardware and software) enhances data security and integrity.

Maximum Seated Height: 0.6 mm

A low seated height of 0.6 mm makes this EEPROM ideal for ultra-thin applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz ensures adequate speed for various data communication needs.

Width: 2 mm

With a width of only 2 mm, this EEPROM is suitable for space-constrained designs.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V ensures compatibility with low-power circuits.

Length: 3 mm

Its compact length of 3 mm is perfect for small form factor applications.

Temperature Grade: COMMERCIAL

Designed to meet commercial temperature specifications, ensuring reliability in everyday applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making the EEPROM efficient and effective.

Parallel or Serial: SERIAL

Serial configuration simplifies data transfer and reduces pin count.

Terminal Form: NO LEAD

No lead design can improve soldering reliability and is environmentally friendly.

Maximum Supply Current: 1 mA

With a maximum supply current of 1 mA, this EEPROM is optimized for low-power applications.

No. of Words: 256 words

Storing 256 words provides sufficient memory for many typical applications.

Memory Width: 8

An 8-bit memory width is standard, offering compatibility with many microcontrollers.

Minimum Data Retention Time: 40

A minimum data retention time of 40 years makes this EEPROM reliable for long-term data storage.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm allows for compact designs without compromising performance.

No. of Words Code: 256

Consistent with its organization, the EEPROM's 256 words code supports diverse application needs.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V ensures robust performance across various device configurations.

Endurance: 1000000 Write/Erase Cycles

With an endurance of 1,000,000 cycles, this EEPROM is suitable for applications requiring frequent data updates.

Serial Bus Type: I2C

Compatibility with I2C serial bus type simplifies connections to microcontrollers and other ICs.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms allows for relatively quick data updates.

Memory Density: 2048 bit

With a memory density of 2048 bits, this EEPROM provides a good balance between performance and capacity.

Memory IC Type: EEPROM

Being an EEPROM ensures non-volatility, retaining data even when power is removed.

Maximum Standby Current: 0.0000005 Amp

The low maximum standby current of 0.5 µA supports energy-efficient applications and design.

Technical Specifications

EEPROM M34E02-FMB1 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-XDSO-N8

JESD-609 Code:

e0

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34E02-FMB1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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