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M34E02-FMB1P

STMicroelectronics

M34E02-FMB1P by STMicroelectronics

M34E02-FMB1P by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and I2C interface. It features a compact 8-terminal package, operates at 1.7-3.6V, and supports up to 1M write/erase cycles, ideal for low-power applications. Its max temp is 70 °C, making it suitable for commercial use in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,934 parts In-Stock

1+ parts

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3,934

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Anansix

USA . 2,084 parts In-Stock

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2,084

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Digiode

USA . 2,064 parts In-Stock

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2,064

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,765 parts In-Stock

1+ parts

$3.629

100+ parts

-

1k+ parts

$3.266

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1,765

$3.629

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$3.266

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MKK Technologies

India . 617 parts In-Stock

1+ parts

$6.825

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617

$6.825

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DigiPath Technology Company

USA . 617 parts In-Stock

1+ parts

$6.825

100+ parts

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617

$6.825

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Corphita

USA . 1,586 parts In-Stock

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1,586

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Parana Technologies

USA . 651 parts In-Stock

1+ parts

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$4.340

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651

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$4.340

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Overview

Enhance your designs with the M34E02-FMB1P EEPROM from STMicroelectronics, a leader in high-quality semiconductor solutions. This compact, low-power memory offers exceptional reliability and versatility for various applications, from industrial automation to consumer electronics. With advanced write protection and a robust endurance of up to 1 million cycles, it ensures data integrity while simplifying integration into your systems. Upgrade your projects with the trusted performance and innovative technology that only STMicroelectronics can deliver!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for efficient use of PCB space, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy integration into various designs and applications.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer rates and efficiency, making the device suitable for high-speed applications.

Nominal Supply Voltage / Vsup: 2.5 V

A nominal supply voltage of 2.5 V helps to ensure low power consumption, which is essential for battery-operated devices.

Power Supplies: 1.8/3.3 V

Supports multiple supply voltage levels, offering flexibility for various electronic designs and compatibility with different systems.

No. of Terminals: 8

The 8-terminal configuration helps in easy integration into circuits and reduces the complexity of the design.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

This specialized packaging allows for enhanced thermal performance and fits into space-constrained environments.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in moderate thermal environments, making it suitable for consumer electronics.

Organization: 256X8

The 256x8 organization optimally structures the memory for applications requiring moderate data storage and retrieval.

Minimum Operating Temperature: 0 °C

Operating down to 0 °C ensures functionality in a variety of environments, including standard household conditions.

I2C Control Byte: 1010DDDR

The specific I2C control byte structure allows for streamlined access and control of the EEPROM in digital communications.

Terminal Position: DUAL

Dual terminal positioning enhances connectivity options, making it easier to integrate into different circuit designs.

Write Protection: HARDWARE/SOFTWARE

The presence of both hardware and software write protection features ensures data integrity and security against accidental writes.

Maximum Seated Height: 0.6 mm

At a maximum seated height of 0.6 mm, this product is ideal for ultra-thin devices.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz supports decent data transfer speeds for a range of applications.

Width: 2 mm

The compact width allows the EEPROM to fit into tighter spaces within electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

A low minimum supply voltage of 1.7 V contributes to reduced power consumption, enhancing energy efficiency.

Length: 3 mm

With a length of 3 mm, the product is designed for space-saving applications.

Temperature Grade: COMMERCIAL

Commercial temperature grades make this EEPROM suitable for a wide range of consumer and industrial applications.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, making it ideal for modern electronic systems.

Parallel or Serial: SERIAL

Serial communication simplifies the wiring and reduces space, making it easier to integrate into various designs.

Terminal Form: NO LEAD

No lead terminals reduce the footprint and contribute to a more environmentally friendly design.

Maximum Supply Current: 2 mA

A low maximum supply current of 2 mA aids in battery-powered applications, extending the device's operating life.

No. of Words: 256 words

Having 256 words of memory allows for sufficient data storage in various applications, ensuring usability beyond basic needs.

Memory Width: 8

An 8-bit memory width aligns well with common data processing requirements, making the device versatile.

Minimum Data Retention Time: 40 years

With a minimum data retention time of 40 years, this EEPROM is reliable for long-term data storage.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm allows for fine-pitch placements in advanced PCB designs.

No. of Words Code: 256

This specification further reinforces the useful memory size, enhancing the product's capacity for various applications.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V provides flexibility across different electronics while maintaining stable performance.

Endurance: 1,000,000 Write/Erase Cycles

An endurance of 1 million write/erase cycles means that this EEPROM can handle frequent updates, making it ideal for data logging.

Serial Bus Type: I2C

Using the I2C serial bus type allows for easy communication with multiple devices, enhancing system connectivity.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms ensures quick data writes, which is essential for time-sensitive applications.

Memory Density: 2048 bit

With a density of 2048 bits, the EEPROM can store substantial data in a compact format, suitable for modern electronic devices.

Memory IC Type: EEPROM

As an EEPROM, it provides the advantages of non-volatile memory while allowing flexible data management.

Maximum Standby Current: 0.000001 Amp

An extremely low maximum standby current ensures minimal energy consumption when the device is not in use.

Technical Specifications

EEPROM M34E02-FMB1P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-XDSO-N8

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34E02-FMB1P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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