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M34E02-FMB1T

STMicroelectronics

M34E02-FMB1T by STMicroelectronics

M34E02-FMB1T by STMicroelectronics is a compact EEPROM with a 2.5V nominal supply, supporting I2C communication. It features a max clock frequency of 400 kHz and offers hardware/software write protection. Ideal for low-power applications, it ensures reliable data retention with 1M write/erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,458 parts In-Stock

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3,458

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Digiode

USA . 1,655 parts In-Stock

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1,655

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Anansix

USA . 1,117 parts In-Stock

1+ parts

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1,117

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 65 parts In-Stock

1+ parts

$3.843

100+ parts

-

1k+ parts

$3.459

10k+ parts

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65

$3.843

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$3.459

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MKK Technologies

India . 2,019 parts In-Stock

1+ parts

$7.226

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2,019

$7.226

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DigiPath Technology Company

USA . 2,019 parts In-Stock

1+ parts

$7.226

100+ parts

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2,019

$7.226

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Corphita

USA . 2,651 parts In-Stock

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2,651

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Parana Technologies

USA . 1,344 parts In-Stock

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100+ parts

$4.595

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1,344

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$4.595

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Overview

Unlock the power of data storage with the M34E02-FMB1T EEPROM from STMicroelectronics. Renowned for its reliability and innovative technology, STMicroelectronics delivers a compact solution perfect for various applications, from consumer electronics to industrial systems. This high-quality EEPROM ensures exceptional performance with low power consumption and robust write protection. Experience seamless integration and enhanced efficiency that empowers your projects today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability ensures easy integration into compact circuit designs, reducing space and improving assembly efficiency.

Package Shape: RECTANGULAR

Rectangular packaging is ideal for fitting into a variety of applications and mounting surfaces.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfers, enhancing overall performance.

Nominal Supply Voltage / Vsup: 2.5 V

A nominal supply voltage of 2.5V is efficient for low-power applications, optimizing energy consumption.

Power Supplies: 1.8/3.3 V

Supports a wide range of supply voltages, making the EEPROM versatile for various electronic designs.

No. of Terminals: 8

Having 8 terminals provides ample connectivity options for integration into larger electronic systems.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

The thin profile and small outline are ideal for space-constrained designs, allowing for higher density layouts.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C makes it suitable for various environments while ensuring reliability.

Organization: 256X8

The 256x8 organization provides substantial data storage, meeting the needs of many applications.

Minimum Operating Temperature: 0 °C

Operating from 0 °C enables use in a broader range of temperature-sensitive applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides better solderability, ensuring reliable connections in PCB assemblies.

I2C Control Byte: 1010DDDR

The I2C control byte structure allows for easy communication and control within I2C bus systems.

Terminal Position: DUAL

Dual terminal positioning aids in symmetrical layout designs, promoting streamlined circuit board design.

Write Protection: HARDWARE/SOFTWARE

Flexible write protection options enhance data safety, ensuring critical data remains intact.

Maximum Seated Height: 0.6 mm

Low seated height enables the EEPROM to be used in slim device designs without compromising functionality.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz provides sufficient speed for many low-speed data applications.

Width: 2 mm

Compact width allows for space-efficient design, ideal for modern electronics.

Minimum Supply Voltage (Vsup): 1.7 V

Minimum voltage requirement of 1.7V makes it suitable for low voltage applications, enhancing flexibility.

Length: 3 mm

Short overall length is advantageous for miniaturized components in tight electronic configurations.

Temperature Grade: COMMERCIAL

Commercial temperature grade signifies reliable performance in consumer-grade applications.

Technology: CMOS

CMOS technology offers low power consumption and higher noise immunity, improving reliability.

Parallel or Serial: SERIAL

Serial communication simplifies wiring and reduces pin count, facilitating easier designs.

Terminal Form: NO LEAD

No-lead terminals enhance space efficiency and improve soldering reliability on PCBs.

Maximum Supply Current: 1 mA

Low supply current minimizes power consumption, making it ideal for battery-operated devices.

No. of Words: 256 words

256 words of memory capacity is suitable for various applications, providing adequate data storage.

Memory Width: 8

An 8-bit memory width allows efficient data handling and is compatible with common microcontroller architectures.

Minimum Data Retention Time: 40 years

Exceptional data retention time ensures that stored data remains intact for extended periods, enhancing reliability.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm is standard for modern electronic components, facilitating easy integration.

No. of Words Code: 256

The code confirms the chip's capacity, ensuring it meets the needs for storing critical data.

Maximum Supply Voltage (Vsup): 3.6 V

Support for a maximum supply voltage of 3.6 V offers flexibility in power supply design for various applications.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures the EEPROM can withstand frequent programming without failure, ideal for applications with regular updates.

Serial Bus Type: I2C

I2C serial bus type simplifies communication in multi-device systems, promoting flexibility and expanded connectivity.

Maximum Write Cycle Time (tWC): 10 ms

Fast write cycle time enhances system responsiveness, making it suitable for applications requiring rapid updates.

Memory Density: 2048 bit

With 2048 bits of memory density, it can store a significant amount of data relative to its size.

Memory IC Type: EEPROM

EEPROM technology provides non-volatile memory storage, ensuring data preservation even after power loss.

Maximum Standby Current: 0.0000005 Amp

Extremely low standby current allows for efficient energy usage, prolonging battery life in portable devices.

Technical Specifications

EEPROM M34E02-FMB1T attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-XDSO-N8

JESD-609 Code:

e0

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34E02-FMB1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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