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M34E02-FDW1P

STMicroelectronics

M34E02-FDW1P by STMicroelectronics

M34E02-FDW1P by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating at 2.5V and supporting I2C communication. It features a max clock frequency of 0.4 MHz and offers hardware/software write protection. Ideal for low-power applications, it endures up to 1M write/erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,880 parts In-Stock

1+ parts

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3,880

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Digiode

USA . 2,969 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,969

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Anansix

USA . 1,049 parts In-Stock

1+ parts

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1,049

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,660 parts In-Stock

1+ parts

$3.877

100+ parts

-

1k+ parts

$3.489

10k+ parts

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1,660

$3.877

-

$3.489

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MKK Technologies

India . 292 parts In-Stock

1+ parts

$7.290

100+ parts

-

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292

$7.290

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DigiPath Technology Company

USA . 292 parts In-Stock

1+ parts

$7.290

100+ parts

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292

$7.290

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Corphita

USA . 4,487 parts In-Stock

1+ parts

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4,487

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Parana Technologies

USA . 331 parts In-Stock

1+ parts

-

100+ parts

$4.635

1k+ parts

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10k+ parts

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331

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$4.635

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Overview

Unlock the potential of your designs with the M34E02-FDW1P EEPROM from STMicroelectronics. Renowned for its exceptional quality and reliability, STMicroelectronics ensures you receive cutting-edge technology that enhances performance across diverse applications—from consumer electronics to industrial automation. With robust write protection and impressive endurance, this compact memory solution offers peace of mind and efficiency, making it an ideal choice for innovative projects. Experience unmatched value that propels your creations to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy construction enhances the reliability and longevity of the EEPROM, making it suitable for various applications.

Surface Mount: YES

Surface mount capability facilitates easy integration into modern circuit boards, saving space and reducing assembly costs.

Package Shape: RECTANGULAR

The rectangular shape optimizes board space utilization while maintaining compatibility with existing PCB layouts.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster data transfer rates, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 2.5 V

A nominal supply voltage of 2.5 V allows for energy-efficient operation, making it ideal for battery-powered applications.

Power Supplies (V): 1.8/3.3

Supports a wide range of power supply voltages, enhancing versatile application possibilities.

No. of Terminals: 8

With 8 terminals, the product offers a compact yet effective interface for connectivity.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch design make the product suitable for space-constrained designs.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability under standard commercial environmental conditions.

Organization: 256X8

The 256X8 organization provides a structured approach to memory management, catering to various data storage needs.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C enables use in a wide range of typical industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold finish improves solderability and reduces oxidation, ensuring long-term reliability.

I2C Control Byte: 1010DDDR

The I2C control byte allows for seamless integration into I2C bus systems, offering flexibility in communication protocols.

Terminal Position: DUAL

Dual terminal positioning allows for more design flexibility and easier routing on printed circuit boards.

Write Protection: HARDWARE/SOFTWARE

Integrated hardware and software write protection features safeguard data integrity, making it suitable for critical applications.

Maximum Seated Height: 1.2 mm

The compact seated height aids in low-profile designs, particularly important in portable electronics.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz accommodates sufficient data transfer speeds for many applications.

Width: 3 mm

The 3 mm width contributes to the overall compactness of the product, ideal for space-constrained designs.

Minimum Supply Voltage (Vsup): 1.7 V

Operating at a minimum supply voltage of 1.7 V enhances compatibility with low-voltage systems.

Length: 4.4 mm

A length of 4.4 mm ensures the pack's small footprint beneficial for compact electronic applications.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures the product is suitable for a broad range of everyday applications.

Technology: CMOS

CMOS technology provides low power consumption and high efficiency, enhancing device longevity.

Parallel or Serial: SERIAL

Serial communication minimizes pin count while enabling efficient data transfer, which is crucial for dense layouts.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide stable connections, enhancing reliability.

Maximum Supply Current: 2 mA

Low maximum supply current of 2 mA ensures energy efficiency, making it ideal for battery-powered applications.

No. of Words: 256 words

With 256 words of memory, this EEPROM provides ample storage for moderate data needs.

Memory Width: 8

An 8-bit memory width allows for efficient data processing and compatibility with common data structures.

Minimum Data Retention Time: 40 years

A minimum data retention time of 40 years ensures long-term data storage reliability, vital for archival applications.

Terminal Pitch: 0.65 mm

The 0.65 mm terminal pitch supports high-density circuit board designs for advanced electronics.

No. of Words Code: 256

With a code of 256 words, the EEPROM is optimized for specific applications needing structured data access.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V accommodates a wide range of applications without risking damage.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1,000,000 write/erase cycles ensures longevity and reliability in data-intensive applications.

Serial Bus Type: I2C

Using the I2C serial bus type enables multi-device communication on a single bus, simplifying connections in designs.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms ensures quick data updates, making it suitable for dynamic applications.

Memory Density: 2048 bit

2048-bit memory density provides a compact data storage solution ideal for embedded systems and automotive applications.

Memory IC Type: EEPROM

As an EEPROM memory IC, it offers non-volatile storage, preserving data without power.

Maximum Standby Current: 0.000001 Amp

A minimal maximum standby current of 1 µA ensures minimal power consumption, extending battery life in portable devices.

Technical Specifications

EEPROM M34E02-FDW1P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34E02-FDW1P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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