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M34E02-FDW1T

STMicroelectronics

M34E02-FDW1T by STMicroelectronics

M34E02-FDW1T by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and I2C interface. It features a wide supply voltage range of 1.7V to 3.6V, and supports up to 1M write/erase cycles. Ideal for compact applications requiring reliable data storage in small devices.

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-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 1,115 parts In-Stock

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Anansix

USA . 743 parts In-Stock

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743

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Digiode

USA . 195 parts In-Stock

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195

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IDEA Electronic Components Group

UK . 783 parts In-Stock

1+ parts

$1.889

100+ parts

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$1.700

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783

$1.889

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$1.700

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MKK Technologies

India . 1,125 parts In-Stock

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$3.552

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$3.552

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DigiPath Technology Company

USA . 1,125 parts In-Stock

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$3.552

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$3.552

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Parana Technologies

USA . 1,934 parts In-Stock

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$2.258

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$2.258

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Corphita

USA . 1,021 parts In-Stock

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1,021

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Overview

Unlock the potential of your next project with the M34E02-FDW1T EEPROM from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This compact, high-performance memory chip is perfect for applications requiring reliability and efficiency, offering exceptional write endurance and low power consumption. Experience seamless integration with its easy-to-use I2C interface, ensuring your designs are agile and future-ready. Elevate your technology with STMicroelectronics today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package ensures durability and robustness, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for more compact circuit designs and efficient assembly.

Package Shape: RECTANGULAR

The rectangular shape is a standard form factor, enabling easy integration into existing designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances performance, providing faster data transfer rates.

Nominal Supply Voltage / Vsup (V): 2.5

Nominal supply voltage of 2.5V optimizes power consumption, making it energy-efficient.

Power Supplies (V): 1.8/3.3

Supports a range of supply voltages (1.8V to 3.3V), providing flexibility for various applications.

No. of Terminals: 8

Having 8 terminals allows for a compact design while still providing ample connectivity.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

This package style facilitates efficient layout and saves board space in compact applications.

Maximum Operating Temperature: 70 °C

Operating at a maximum temperature of 70 °C makes it suitable for commercial applications.

Organization: 256X8

This memory organization provides a balance between capacity and accessibility, ideal for various data storage needs.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C ensures reliable performance in standard conditions.

Terminal Finish: TIN LEAD

The tin lead finish enhances solderability and compatibility with standard assembly processes.

I2C Control Byte: 1010DDDR

This control byte structure ensures compatibility with I2C communication, a widely used protocol.

Terminal Position: DUAL

Dual terminal positioning aids in more versatile mounting options.

Write Protection: HARDWARE/SOFTWARE

Flexible write protection options offer enhanced data security against accidental modification.

Maximum Seated Height: 1.2 mm

A low seated height provides compatibility with space-constrained applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz accommodates moderate-speed operations, suitable for many applications.

Width: 3 mm

A compact width of 3 mm is ideal for space-constrained designs.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage of 1.7V ensures flexibility in power supply options for embedded systems.

Length: 4.4 mm

The small length allows for easier integration into tight spaces on PCBs.

Temperature Grade: COMMERCIAL

Designed for commercial applications, ensuring reliability and performance in standard conditions.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, enhancing performance.

Parallel or Serial: SERIAL

The serial interface type reduces pin count and supports simple wiring connections.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and ease of assembly.

Maximum Supply Current: 1 mA

A low supply current specification (1 mA) contributes to overall energy efficiency.

No. of Words: 256 words

With a capacity of 256 words, this EEPROM provides ample storage for small to medium applications.

Memory Width: 8

An 8-bit memory width enables straightforward data handling and processing.

Minimum Data Retention Time: 40 years

Long data retention time ensures that vital information remains intact for extended periods.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm is common among surface mount devices, facilitating design compatibility.

No. of Words Code: 256

The code count of 256 highlights the device's capacity for storing structured data.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V provides robust performance under varied electrical conditions.

Endurance: 1,000,000 Write/Erase Cycles

High endurance supports frequent write and erase operations, making it suitable for dynamic data storage.

Serial Bus Type: I2C

I2C compatibility allows for easy integration with various microcontrollers and systems.

Maximum Write Cycle Time (tWC): 10 ms

Fast write cycle time enhances performance in applications requiring quick data updates.

Memory Density: 2048 bit

With a density of 2048 bits, it addresses moderate storage needs effectively.

Memory IC Type: EEPROM

As an EEPROM, this memory retains data without power, making it suitable for critical applications.

Maximum Standby Current: 0.5 µA

The low standby current allows for battery-operated designs, enhancing energy efficiency.

Technical Specifications

EEPROM M34E02-FDW1T attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.4 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34E02-FDW1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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