Loading...

M34E02-FDW1G

STMicroelectronics

M34E02-FDW1G by STMicroelectronics

M34E02-FDW1G by STMicroelectronics is a 2048-bit EEPROM with I2C interface, ideal for low-power applications. It operates at 1.8-3.6V and features a max clock frequency of 0.4 MHz, ensuring efficient data handling. With up to 1M write/erase cycles, it's perfect for reliable memory storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,686 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,686

-

-

-

-

Vyrian

USA . 702 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

702

-

-

-

-

Digiode

USA . 87 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

87

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 346 parts In-Stock

1+ parts

$4.794

100+ parts

-

1k+ parts

$4.315

10k+ parts

-

346

$4.794

-

$4.315

-

MKK Technologies

India . 2,239 parts In-Stock

1+ parts

$9.015

100+ parts

-

1k+ parts

-

10k+ parts

-

2,239

$9.015

-

-

-

DigiPath Technology Company

USA . 2,239 parts In-Stock

1+ parts

$9.015

100+ parts

-

1k+ parts

-

10k+ parts

-

2,239

$9.015

-

-

-

Corphita

USA . 508 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

508

-

-

-

-

Parana Technologies

USA . 53 parts In-Stock

1+ parts

-

100+ parts

$5.732

1k+ parts

-

10k+ parts

-

53

-

$5.732

-

-

Overview

Unlock a world of reliability and performance with the M34E02-FDW1G EEPROM from STMicroelectronics. Renowned for their innovation and quality, STMicroelectronics delivers this compact, high-efficiency memory solution that excels in consumer electronics, industrial applications, and IoT devices. Enjoy exceptional data retention, seamless integration, and advanced write protection features, all crafted to enhance your projects while ensuring longevity and efficiency. Experience the advantage of trusted technology that elevates your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and good thermal performance.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design.

Package Shape: RECTANGULAR

The rectangular shape is ideal for efficient use of board space.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer rates and efficiency.

Nominal Supply Voltage / Vsup (V): 2.5

A nominal voltage of 2.5V supports compatibility with modern low-voltage systems.

Power Supplies (V): 1.8/3.3

Flexible supply voltages (1.8V to 3.3V) enhance compatibility with a range of applications.

No. of Terminals: 8

Eight terminals allow for compact design while providing necessary connectivity.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile save space on PCBs, enabling higher density designs.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in standard commercial environments.

Organization: 256X8

This memory organization offers a good balance of storage capacity and access speed.

Minimum Operating Temperature: 0 °C

A minimum operating temperature ensures functionality in a wide range of environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish improves solderability and enhances overall product reliability.

I2C Control Byte: 1010DDDR

The standard I2C control byte allows for easy integration into existing I2C-based systems.

Terminal Position: DUAL

Dual terminal positioning enhances the flexibility of PCB design layout.

Write Protection: HARDWARE/SOFTWARE

Dual write protection ensures data integrity and security, vital for critical applications.

Maximum Seated Height: 1.2 mm

A low seated height is beneficial for thin profile applications, contributing to space-saving designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz is sufficient for most low-speed applications.

Width: 3 mm

A compact width supports space-efficient designs in modern electronics.

Minimum Supply Voltage (Vsup): 1.7 V

Low minimum supply voltage capability optimizes power consumption in battery-operated devices.

Length: 4.4 mm

Compact length enhances layout flexibility for various applications without sacrificing performance.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliability for consumer electronics and compatible applications.

Technology: CMOS

CMOS technology allows for low power consumption and high-speed operation.

Parallel or Serial: SERIAL

Serial interface reduces pin count, making integration easier in sophisticated designs.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and assembly in manufacturing processes.

Maximum Supply Current: 2 mA

Low maximum supply current minimizes power consumption, enhancing battery life in portable devices.

No. of Words: 256 words

256 words of memory capacity meets the needs of various storage applications.

Memory Width: 8

An 8-bit memory width is optimal for standard data processing applications.

Minimum Data Retention Time: 40

Long data retention times ensure data integrity over extended periods of non-use.

Terminal Pitch: 0.65 mm

The 0.65 mm terminal pitch is conducive to high-density PCB layouts.

No. of Words Code: 256

Supports a straightforward addressing scheme with 256 individual data words.

Maximum Supply Voltage (Vsup): 3.6 V

Compatibility with higher supply voltage environments broadens application possibilities.

Endurance: 1000000 Write/Erase Cycles

High endurance enhances the longevity of the memory product, making it suitable for frequent write applications.

Serial Bus Type: I2C

The I2C bus type facilitates easy communication with multiple devices on the same bus.

Maximum Write Cycle Time (tWC): 10 ms

Fast write cycle times improve performance in time-sensitive applications.

Memory Density: 2048 bit

A memory density of 2048 bits provides adequate storage for a variety of data applications.

Memory IC Type: EEPROM

As an EEPROM, it offers non-volatile storage, maintaining data without power.

Maximum Standby Current: 0.000001 Amp

Extremely low standby current minimizes power draw when the device is idle, improving energy efficiency.

Technical Specifications

EEPROM M34E02-FDW1G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34E02-FDW1G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19