Loading...

M34C02-FBN6

STMicroelectronics

M34C02-FBN6 by STMicroelectronics

M34C02-FBN6 by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and I2C serial bus type. It operates b/w -40 °C to 85 °C, with a supply voltage range of 1.7V to 3.6V. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,084 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,084

-

-

-

-

Digiode

USA . 383 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

383

-

-

-

-

Anansix

USA . 140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

140

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,330 parts In-Stock

1+ parts

$4.831

100+ parts

-

1k+ parts

$4.348

10k+ parts

-

2,330

$4.831

-

$4.348

-

MKK Technologies

India . 395 parts In-Stock

1+ parts

$9.084

100+ parts

-

1k+ parts

-

10k+ parts

-

395

$9.084

-

-

-

DigiPath Technology Company

USA . 395 parts In-Stock

1+ parts

$9.084

100+ parts

-

1k+ parts

-

10k+ parts

-

395

$9.084

-

-

-

Corphita

USA . 1,668 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,668

-

-

-

-

Parana Technologies

USA . 1,387 parts In-Stock

1+ parts

-

100+ parts

$5.776

1k+ parts

-

10k+ parts

-

1,387

-

$5.776

-

-

Overview

Unlock the potential of your projects with the M34C02-FBN6 EEPROM from STMicroelectronics, a trusted name in innovation. This high-quality memory solution excels in reliability and efficiency, designed for a wide range of industrial applications. With a robust temperature range and synchronized operation, it ensures seamless performance even in demanding environments. Enhance your designs with its compact footprint, enabling smarter, faster solutions that add significant value to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to moisture, making the EEPROM suitable for various environmental conditions.

Package Shape: RECTANGULAR

The rectangular shape allows efficient use of PCB space, making it ideal for compact designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer rates, making this EEPROM a great choice for applications requiring quick response times.

Nominal Supply Voltage / Vsup: 2.5 V

Operating at a nominal voltage of 2.5 V optimizes power consumption, making it suitable for low-power applications.

No. of Terminals: 8

The 8-terminal design simplifies interfacing and reduces complexity in circuit layout.

Package Style (Meter): IN-LINE

The in-line package style is compatible with various mounting options, providing flexibility in design.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this EEPROM can function reliably in high-temperature environments.

Organization: 256X8

The 256x8 organization optimizes data handling, making it efficient for structured memory applications.

Minimum Operating Temperature: -40 °C

Its ability to operate at temperatures as low as -40 °C makes it suitable for harsh environments.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish enhances solderability and ensures reliable connections.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility in PCB layout, allowing for easier integration into designs.

Maximum Seated Height: 5.33 mm

A compact seated height of 5.33 mm aids in space-constrained applications.

Maximum Clock Frequency (fCLK): 0.1 MHz

The clock frequency of 0.1 MHz allows for stable and reliable operations in various applications.

Width: 7.62 mm

The width of 7.62 mm makes this EEPROM easy to integrate into standard PCB designs.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage of 1.7 V supports modern low-voltage systems, enhancing its versatility.

Length: 9.27 mm

A length of 9.27 mm makes it well-suited for tight spaces on circuit boards.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, this EEPROM is designed for reliability in demanding conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, making this EEPROM efficient for various applications.

Parallel or Serial: SERIAL

Serial configuration allows for simpler connections and less pin usage, making it ideal for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support, enhancing durability in physical connections.

No. of Words: 256 words

With a word count of 256, it provides an adequate memory size for small applications without being overly complicated.

Memory Width: 8

An 8-bit memory width balances performance and complexity, making it suitable for a wide range of applications.

Terminal Pitch: 2.54 mm

A standard terminal pitch of 2.54 mm simplifies component placement and assembly.

No. of Words Code: 256

The 256 words code allows for structured access to data, facilitating easy data management.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6 V enables compatibility with a wider range of systems and reduces the risk of damage.

Serial Bus Type: I2C

I2C interface is widely used, providing compatibility with a broad array of devices and simplifying integration.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms ensures efficient data writing, making it suitable for applications requiring frequent updates.

Memory Density: 2048 bit

2048 bits of memory density provide a sufficient capacity for a variety of low to moderate data storage needs.

Memory IC Type: EEPROM

As an EEPROM, it allows for data retention without power, making it ideal for settings that require non-volatile memory.

Technical Specifications

EEPROM M34C02-FBN6 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.1 MHz

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.27 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

M34C02-FBN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19