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M34C00-WDW6

STMicroelectronics

M34C00-WDW6 by STMicroelectronics

M34C00-WDW6 by STMicroelectronics is a 384-bit EEPROM with I2C interface, ideal for industrial applications. It operates at 3.3V and features a max temp of 85 °C, ensuring reliability in harsh environments. With software write protection and 1M cycles endurance, it’s perfect for data retention tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,498 parts In-Stock

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4,498

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Digiode

USA . 3,558 parts In-Stock

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3,558

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Anansix

USA . 255 parts In-Stock

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255

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,554 parts In-Stock

1+ parts

$5.457

100+ parts

-

1k+ parts

$4.912

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1,554

$5.457

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$4.912

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MKK Technologies

India . 1,688 parts In-Stock

1+ parts

$10.262

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1,688

$10.262

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DigiPath Technology Company

USA . 1,688 parts In-Stock

1+ parts

$10.262

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1,688

$10.262

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Corphita

USA . 3,091 parts In-Stock

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3,091

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Parana Technologies

USA . 653 parts In-Stock

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$6.525

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653

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$6.525

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Overview

Unlock the potential of your designs with the M34C00-WDW6 EEPROM from STMicroelectronics. Renowned for precision and reliability, this high-quality memory solution is ideal for a range of applications, from industrial automation to consumer electronics. With its compact size, low power consumption, and robust write protection, it ensures seamless data integrity and longevity. Choose STMicroelectronics for unmatched expertise, augmenting your projects with superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the product suitable for a wide range of applications.

Surface Mount: YES

Surface-mount technology allows for efficient use of board space and easier assembly processes, enhancing design flexibility.

Package Shape: RECTANGULAR

The rectangular package shape facilitates compact layout designs, making it easier to integrate into various device types.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for higher data transfer rates and improved performance in applications requiring fast read/write cycles.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V is compatible with modern digital systems, ensuring ease of integration into 3.3V environments.

Power Supplies (V): 3/5

Supports a dual voltage range (3V to 5V), offering greater versatility for use in different systems.

No. of Terminals: 8

The 8 terminal configuration allows for a simple interface and ease of connection to other components on the board.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile are advantageous for space-constrained applications, facilitating integration into compact designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this EEPROM is suitable for industrial environments and applications with exposed conditions.

Organization: 48X8

An organization of 48x8 ensures ample data storage capacity while maintaining ease of access and manipulation of data.

Minimum Operating Temperature: -40 °C

Capable of operating at -40 °C, this EEPROM is ideal for outdoor and harsh environments, ensuring reliability in extreme conditions.

I2C Control Byte: 1010111R

The predefined I2C control byte indicates compatibility with standard I2C protocols, allowing for easy integration into existing systems.

Terminal Position: DUAL

Dual terminal positioning provides flexibility during board layout and assembly, aiding in design efficiency.

Write Protection: SOFTWARE

Software write protection enhances data security and prevents accidental data loss, making it suitable for critical applications.

Maximum Seated Height: 1.2 mm

A low seated height of 1.2 mm is ideal for designs requiring height constraints, ensuring compatibility with slim profiles.

Maximum Clock Frequency (fCLK): 0.4 MHz

A maximum clock frequency of 0.4 MHz allows for reasonable transfer rates in many applications while maintaining power efficiency.

Width: 3 mm

A compact width of 3 mm ensures this EEPROM can fit in tight spaces, perfect for modern miniature devices.

Minimum Supply Voltage (Vsup): 2.5 V

Compatible with a minimum supply voltage of 2.5V, this EEPROM can be used in low-voltage systems, enhancing flexibility.

Length: 4.4 mm

The modest length of 4.4 mm allows convenient placement on PCBs where space is limited.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature ranges, the EEPROM is suitable for applications in demanding environments.

Technology: CMOS

CMOS technology enables low power consumption and high speed operation, making this EEPROM efficient for battery-powered devices.

Parallel or Serial: SERIAL

Serial interface reduces pin count and enables simpler connections, making this EEPROM ideal for compact circuit designs.

Terminal Form: GULL WING

Gull wing form facilitates reliable soldering and excellent electrical connectivity, which is essential in surface-mount applications.

Maximum Supply Current: 2 mA

A low maximum supply current of 2 mA is beneficial for minimizing power consumption in battery-operated devices.

No. of Words: 48 words

With a capacity of 48 words, this EEPROM provides sufficient data storage for a variety of applications.

Memory Width: 8

An 8-bit memory width supports a standard byte of data manipulation, making it compatible with typical data handling processes.

Minimum Data Retention Time: 40

A minimum data retention time of 40 years ensures longevity and reliability of stored data, critical for many applications.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm allows for high-density PCB designs, ideal for miniaturized electronics.

No. of Words Code: 48

The 48 words of code provide the necessary storage for simple applications, balancing capacity and complexity.

Maximum Supply Voltage (Vsup): 5.5 V

The ability to tolerate a maximum supply voltage of 5.5V enhances flexibility for use in various power supply configurations.

Endurance: 1000000 Write/Erase Cycles

An endurance rating of 1,000,000 write/erase cycles guarantees long-term reliability and suitability for applications requiring frequent updates.

Serial Bus Type: I2C

I2C bus compatibility simplifies communication with microcontrollers and sensors, streamlining design efforts.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms ensures relatively quick updates to memory, suitable for responsive applications.

Memory Density: 384 bit

With a memory density of 384 bits, the EEPROM strikes an effective balance between size and storage capability.

Memory IC Type: EEPROM

As an EEPROM, this IC provides non-volatile storage that retains data without power, ideal for battery-backed applications.

Maximum Standby Current: 0.000001 Amp

A maximum standby current of 1 µA minimizes power consumption during idle periods, extending battery life in portable devices.

Technical Specifications

EEPROM M34C00-WDW6 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010111R

JESD-30 Code:

R-PDSO-G8

Length:

4.4 mm

Memory Density:

384 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

48 words

No. of Words Code:

48

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

48X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

M34C00-WDW6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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