Loading...

M34C02-FBN1P

STMicroelectronics

M34C02-FBN1P by STMicroelectronics

M34C02-FBN1P by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and I2C interface. It operates at 1.8-3.6V, features 256x8 organization, and supports up to 1M write/erase cycles, making it ideal for data storage in consumer electronics. Its compact design ensures efficient integration in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,977 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,977

-

-

-

-

Vyrian

USA . 3,676 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,676

-

-

-

-

Anansix

USA . 994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

994

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,071 parts In-Stock

1+ parts

$5.042

100+ parts

-

1k+ parts

$4.537

10k+ parts

-

1,071

$5.042

-

$4.537

-

MKK Technologies

India . 2,195 parts In-Stock

1+ parts

$9.480

100+ parts

-

1k+ parts

-

10k+ parts

-

2,195

$9.480

-

-

-

DigiPath Technology Company

USA . 2,195 parts In-Stock

1+ parts

$9.480

100+ parts

-

1k+ parts

-

10k+ parts

-

2,195

$9.480

-

-

-

Parana Technologies

USA . 1,776 parts In-Stock

1+ parts

-

100+ parts

$6.028

1k+ parts

-

10k+ parts

-

1,776

-

$6.028

-

-

Corphita

USA . 114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

114

-

-

-

-

Overview

Unlock exceptional performance and reliability with the M34C02-FBN1P EEPROM from STMicroelectronics. Designed for diverse applications, this compact memory solution offers superior data retention and endurance, ensuring your projects run smoothly under various conditions. With ST's renowned quality and commitment to innovation, you gain peace of mind and a competitive edge, making it the ideal choice for both hobbyists and professionals seeking efficiency and durability in their designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures the EEPROM is both cost-effective and reliable, providing a good balance of performance and protection.

Package Shape: RECTANGULAR

Rectangular packaging allows for efficient use of PCB space, making it easier to integrate into various designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfers, which can enhance overall system performance.

Nominal Supply Voltage / Vsup (V): 2.5

The nominal voltage level of 2.5V optimizes power consumption, making it suitable for low-power applications.

Power Supplies (V): 1.8/3.3

Supports a wide range of supply voltages, ensuring compatibility with different systems and reducing design complexity.

No. of Terminals: 8

An 8-terminal configuration provides essential connectivity while keeping the design compact.

Package Style (Meter): IN-LINE

The in-line package style facilitates easier assembly and integration into circuit boards.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance under various environmental conditions.

Organization: 256X8

This organization enables straightforward memory management, making it simpler to access and manipulate stored data.

Minimum Operating Temperature: 0 °C

The minimum operating temperature ensures performance in a variety of real-world conditions without compromising reliability.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and helps reduce oxidation over time, enhancing longevity.

I2C Control Byte: 1010DDDR

The I2C control capability ensures easy communication with microcontrollers, making integration seamless.

Terminal Position: DUAL

Dual terminal position enhances connectivity options, improving flexibility in PCB design.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection mechanisms enhances data security, protecting stored information.

Maximum Seated Height: 5.33 mm

A compact seated height allows for more versatile designs, reducing space constraints on PCBs.

Maximum Clock Frequency (fCLK): 0.1 MHz

A suitable clock frequency for applications that require moderate throughput, balancing speed and power consumption.

Width: 7.62 mm

Compact width supports space-efficient applications, allowing for dense PCB layouts.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage of 1.7V makes this EEPROM suitable for battery-powered and energy-efficient designs.

Length: 9.27 mm

This length complements the overall compact footprint, facilitating easier integration into various applications.

Temperature Grade: COMMERCIAL

Commercial-grade components ensure adequate performance in standard operating environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it ideal for modern electronic devices.

Parallel or Serial: SERIAL

Serial communication reduces the number of pins required, simplifying design while maintaining efficient data transfer.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections, ideal for prototyping and more robust applications.

Maximum Supply Current: 1 mA

Low supply current minimizes power usage, making it suitable for energy-critical applications.

No. of Words: 256 words

With a word count of 256, this EEPROM is suitable for simple applications requiring moderate data storage.

Memory Width: 8

An 8-bit memory width enables efficient data access patterns and is compatible with standard data buses.

Minimum Data Retention Time: 40 years

A long data retention time assures reliability and longevity of stored data, making it an excellent choice for essential storage.

Terminal Pitch: 2.54 mm

Standard terminal pitch allows for easy assembly and compatibility with common PCB layouts.

No. of Words Code: 256

This spec indicates the device is designed for moderate data storage, appropriate for a range of applications.

Maximum Supply Voltage (Vsup): 3.6 V

This maximum voltage rating increases versatility and enhances compatibility with various power supplies.

Endurance: 1000000 Write/Erase Cycles

A high endurance rating makes this EEPROM suitable for applications with frequent write/erase cycles, ensuring durability.

Serial Bus Type: I2C

I2C bus compatibility facilitates easy integration with other components, enhancing the versatility of design.

Maximum Write Cycle Time (tWC): 10 ms

A quick write cycle time enhances overall system responsiveness, making it ideal for dynamic data management.

Memory Density: 2048 bit

A dense memory configuration offers a compact solution for applications requiring efficient use of space while providing sufficient storage.

Memory IC Type: EEPROM

As an EEPROM, this device provides non-volatile storage, retaining data even when power is removed.

Maximum Standby Current: 0.0000005 Amp

Ultra low standby current minimizes power consumption during idle periods, making it suitable for battery-powered applications.

Technical Specifications

EEPROM M34C02-FBN1P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.1 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34C02-FBN1P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19