Loading...

M34C02-FBN1G

STMicroelectronics

M34C02-FBN1G by STMicroelectronics

M34C02-FBN1G by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and I2C interface. It operates at 1.8-3.6V, features 256x8 organization, and supports up to 1M write/erase cycles, ideal for data storage in consumer electronics. Its compact design ensures efficient integration in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,547 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,547

-

-

-

-

Vyrian

USA . 1,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,145

-

-

-

-

Anansix

USA . 427 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

427

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 148 parts In-Stock

1+ parts

$3.434

100+ parts

-

1k+ parts

$3.091

10k+ parts

-

148

$3.434

-

$3.091

-

MKK Technologies

India . 668 parts In-Stock

1+ parts

$6.458

100+ parts

-

1k+ parts

-

10k+ parts

-

668

$6.458

-

-

-

DigiPath Technology Company

USA . 668 parts In-Stock

1+ parts

$6.458

100+ parts

-

1k+ parts

-

10k+ parts

-

668

$6.458

-

-

-

Corphita

USA . 4,211 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,211

-

-

-

-

Parana Technologies

USA . 1,163 parts In-Stock

1+ parts

-

100+ parts

$4.106

1k+ parts

-

10k+ parts

-

1,163

-

$4.106

-

-

Overview

Unlock the power of reliable data storage with the M34C02-FBN1G from STMicroelectronics. This high-quality EEPROM solution ensures seamless performance across diverse applications, thanks to its robust design and advanced features. Enjoy the benefits of up to 1 million write/erase cycles, making it perfect for everything from consumer electronics to industrial automation. Trust in STMicroelectronics' legacy of excellence and elevate your projects with superior memory that meets your needs efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material provides good protection for the internal components.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient space utilization on PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances speed and efficiency during data transactions.

Nominal Supply Voltage / Vsup: 2.5 V

A balanced nominal voltage ensures compatibility with various microcontroller systems.

Power Supplies: 1.8/3.3 V

Flexible supply voltage options help in integrating with low-power and standard voltage applications.

No. of Terminals: 8

A compact design with only 8 terminals simplifies connections and reduces PCB space requirements.

Package Style (Meter): IN-LINE

In-line style aids in straightforward mounting and enhances manufacturing efficiency.

Maximum Operating Temperature: 70 °C

Suitable for commercial applications with a safe operating range, ensuring reliability in various environments.

Organization: 256X8

Offers a structured memory organization for efficient data management and access.

Minimum Operating Temperature: 0 °C

Operational range starts from 0 °C, making it suitable for various real-world applications.

Terminal Finish: MATTE TIN

MATTE TIN finish improves solderability and enhances long-term reliability of connections.

I2C Control Byte: 1010DDDR

A standard I2C control byte facilitates easy integration into existing I2C-based systems.

Terminal Position: DUAL

Dual terminal positioning allows for a more versatile mounting option, beneficial for different layouts.

Write Protection: HARDWARE/SOFTWARE

Dual write protection mechanisms protect critical data from unintended modifications.

Maximum Seated Height: 5.33 mm

Compact height conserves space and allows for stacking of components on compact PCB designs.

Maximum Clock Frequency (fCLK): 0.1 MHz

Low clock frequency supports low power during operation, making it ideal for battery-powered applications.

Width: 7.62 mm

A relatively narrow width contributes to reduced PCB sizes while maintaining required functionality.

Minimum Supply Voltage (Vsup): 1.7 V

Allows operation in low-voltage environments, enhancing flexibility in system design.

Length: 9.27 mm

Optimal length aids in space-efficient layouts suitable for a range of electronic applications.

Temperature Grade: COMMERCIAL

Commercial-grade quality ensures reliability in a wide variety of practical applications.

Technology: CMOS

CMOS technology supports low power consumption while offering high-speed performance.

Parallel or Serial: SERIAL

Serial communication minimizes pin count and simplifies wiring, beneficial for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole form factor provides robust mechanical stability and simple soldering capabilities.

Maximum Supply Current: 1 mA

Low supply current enables efficient power usage, ideal for low-power applications.

No. of Words: 256 words

Sufficient word count for many applications requiring moderate data storage.

Memory Width: 8

8-bit memory width aligns with standard data bus widths, optimizing data handling.

Minimum Data Retention Time: 40 years

Long data retention time ensures that stored information remains intact over extended periods.

Terminal Pitch: 2.54 mm

Standard pitch facilitates compatibility with existing PCB design and assembly processes.

No. of Words Code: 256

Adequate coding capacity supports variety in data storage and manipulation applications.

Maximum Supply Voltage (Vsup): 3.6 V

Supports multiple supply voltage levels allowing versatility across various systems and applications.

Endurance: 1000000 Write/Erase Cycles

High endurance guarantees reliability and longevity in applications requiring frequent writes.

Serial Bus Type: I2C

I2C interface simplifies connectivity with multiple devices, enhancing integration possibilities.

Maximum Write Cycle Time (tWC): 10 ms

Fast write cycle time improves performance in applications that demand quick data updates.

Memory Density: 2048 bit

Adequate memory density for various embedded applications requiring moderate memory solutions.

Memory IC Type: EEPROM

EEPROM type ensures non-volatile memory, retaining data even when power is off.

Maximum Standby Current: 0.0000005 Amp

Extremely low standby current enhances energy efficiency, making it ideal for battery-powered devices.

Technical Specifications

EEPROM M34C02-FBN1G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.1 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M34C02-FBN1G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19