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M34C00-WDW6T

STMicroelectronics

M34C00-WDW6T by STMicroelectronics

M34C00-WDW6T by STMicroelectronics is a compact EEPROM with a 384-bit density, operating at 3.3V and supporting I2C communication. It features a -40 °C to 85°C temp range and offers software write protection for reliable data storage. Ideal for industrial applications requiring robust memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,468 parts In-Stock

1+ parts

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3,468

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Digiode

USA . 2,443 parts In-Stock

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2,443

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Anansix

USA . 679 parts In-Stock

1+ parts

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679

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 404 parts In-Stock

1+ parts

$3.683

100+ parts

-

1k+ parts

$3.314

10k+ parts

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404

$3.683

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$3.314

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MKK Technologies

India . 1,775 parts In-Stock

1+ parts

$6.925

100+ parts

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1,775

$6.925

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DigiPath Technology Company

USA . 1,775 parts In-Stock

1+ parts

$6.925

100+ parts

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1,775

$6.925

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Corphita

USA . 4,536 parts In-Stock

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4,536

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Parana Technologies

USA . 482 parts In-Stock

1+ parts

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$4.403

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482

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$4.403

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Overview

Elevate your designs with the M34C00-WDW6T EEPROM from STMicroelectronics, a trusted leader in innovation. This compact, versatile memory solution offers exceptional reliability for industrial applications, ensuring data integrity across harsh environments. With low power consumption and robust write protection, it delivers efficiency without compromise. Experience seamless integration and enhanced performance, empowering your projects to reach new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability, making the EEPROM suitable for various applications.

Surface Mount: YES

Being a surface mount device allows for efficient use of board space, enabling compact designs.

Package Shape: RECTANGULAR

The rectangular shape contributes to a better fit on PCBs, enhancing layout flexibility.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfers, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V is standard for many systems, ensuring compatibility with modern electronics.

Power Supplies (V): 3/5

Supports multiple supply voltages (3V and 5V), enhancing versatility in application settings.

No. of Terminals: 8

With 8 terminals, it provides adequate connectivity while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and shrink pitch allow for placement in tight spaces, vital for miniaturized electronics.

Maximum Operating Temperature: 85 °C

This temperature range is suitable for industrial applications, ensuring reliable performance in harsh environments.

Organization: 48X8

With 48x8 organization, it provides a balanced architecture for efficient data handling.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures makes it suitable for extreme conditions.

Terminal Finish: TIN LEAD

Tin-lead finish enhances solderability, providing better reliability in connections.

I2C Control Byte: 1010111R

The I2C control byte indicates compatibility with the widely-used I2C protocol, allowing easy integration into modern systems.

Terminal Position: DUAL

Dual terminal positioning can facilitate more efficient PCB routing, simplifying assembly.

Write Protection: SOFTWARE

Software write protection enhances data integrity by preventing unintended write actions.

Maximum Seated Height: 1.2 mm

A low seated height means it occupies less vertical space on the application board.

Maximum Clock Frequency (fCLK): 0.4 MHz

This clock frequency offers a good balance of speed and power consumption for most applications.

Width: 3 mm

A width of 3 mm allows for compact circuit designs without compromising on performance.

Minimum Supply Voltage (Vsup): 2.5 V

The low minimum supply voltage expands compatibility with various power systems.

Length: 4.4 mm

A length of 4.4 mm supports design flexibility while maintaining a compact footprint.

Temperature Grade: INDUSTRIAL

Industrial temperature grade guarantees reliability in manufacturing and production environments.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed performance, making it ideal for modern devices.

Parallel or Serial: SERIAL

Serial communication reduces pin count on the device, which is advantageous for compact designs.

Terminal Form: GULL WING

Gull wing terminals provide better mechanical stability and ease of soldering.

Maximum Supply Current: 2 mA

Low supply current contributes to energy efficiency, extending battery life in portable applications.

No. of Words: 48 words

Having 48 words of memory is sufficient for many embedded applications, allowing for effective data storage.

Memory Width: 8

An 8-bit memory width is compatible with a range of data types, improving versatility.

Minimum Data Retention Time: 40

A minimum data retention time of 40 years ensures long-term reliability of stored information.

Terminal Pitch: 0.65 mm

The 0.65 mm terminal pitch allows for a compact layout while ensuring good soldering practices.

No. of Words Code: 48

The 48-word coding capacity increases the memory's efficiency for numeric data storage.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage accommodates systems requiring higher voltage levels.

Endurance: 1000000 Write/Erase Cycles

With an endurance of 1 million cycles, this EEPROM is suitable for applications where frequent updates are necessary.

Serial Bus Type: I2C

I2C serial bus compatibility allows for multi-device configuration, streamlining system design.

Maximum Write Cycle Time (tWC): 10 ms

A 10 ms write cycle time is effective for many applications, providing a balance of speed and reliability.

Memory Density: 384 bit

384-bit memory density strikes a favorable balance between compact size and functional capacity.

Memory IC Type: EEPROM

As an EEPROM, it provides non-volatile memory, preserving data without power supply.

Maximum Standby Current: 0.000001 Amp

Extremely low standby current aids in power conservation, beneficial for battery-operated devices.

Technical Specifications

EEPROM M34C00-WDW6T attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010111R

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.4 mm

Memory Density:

384 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

48 words

No. of Words Code:

48

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

48X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

M34C00-WDW6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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