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BTB08-800CWRG

STMicroelectronics

BTB08-800CWRG by STMicroelectronics

BTB08-800CWRG by STMicroelectronics is a snubberless TRIAC designed for AC control applications. It features a max RMS on-state current of 8 A, repetitive peak off-state voltage of 800 V, and operates b/w -40 °C to 125 °C. Ideal for lighting and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,976 parts In-Stock

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3,976

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Vyrian

USA . 2,874 parts In-Stock

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2,874

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Anansix

USA . 2,153 parts In-Stock

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2,153

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,363 parts In-Stock

1+ parts

$2.821

100+ parts

-

1k+ parts

$2.539

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2,363

$2.821

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$2.539

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MKK Technologies

India . 638 parts In-Stock

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$5.304

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638

$5.304

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DigiPath Technology Company

USA . 638 parts In-Stock

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$5.304

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638

$5.304

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AZTECH Wire

Italy . 819 parts In-Stock

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$12.890

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819

$12.890

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Corphita

USA . 3,125 parts In-Stock

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3,125

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Northwest PG Solutions

USA . 813 parts In-Stock

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813

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Parana Technologies

USA . 653 parts In-Stock

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$3.373

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653

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$3.373

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Native Components

USA . 109 parts In-Stock

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109

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Overview

Elevate your projects with the BTB08-800CWRG from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This robust TRIAC delivers exceptional performance for AC control applications, ensuring reliable operation under various conditions. With its snubberless design, it minimizes electrical noise and enhances efficiency. Choose the BTB08-800CWRG for superior quality, longevity, and peace of mind—perfect for industrial controls, lighting regulation, and motor management. Unlock the potential of your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance against environmental factors, making this TRIAC reliable for various applications.

Maximum DC Gate Trigger Current: 35 mA

A maximum DC gate trigger current of 35 mA allows for efficient triggering with low power consumption, enhancing the overall performance.

Configuration: SINGLE

A single configuration simplifies circuit design and provides ease of integration into various electronic devices.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout and space-saving in applications, making it a practical choice for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections and mechanical stability, ideal for applications requiring durability.

Maximum Leakage Current: 1 mA

A low maximum leakage current of 1 mA ensures minimal power loss during operation, contributing to energy efficiency.

No. of Terminals: 3

Three terminals allow for versatile circuit configurations and facilitate ease of connection in different setups.

Package Style (Meter): FLANGE MOUNT

The flange mount style supports easy installation and secure mounting, enhancing reliability in various applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this TRIAC can perform well in high-temperature environments, ensuring reliability.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless design allows for quick response times and reduced losses, making it ideal for high-speed applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range from -40 °C ensures reliability in extreme environments, making it suitable for diverse applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent corrosion resistance, ensuring long-term reliability in various operating conditions.

Terminal Position: SINGLE

A single terminal position simplifies wiring and connection processes, making installation straightforward and efficient.

Maximum RMS On-state Current: 8 A

A maximum RMS on-state current of 8 A makes this TRIAC capable of handling substantial loads, suitable for various high-current applications.

Maximum DC Gate Trigger Voltage: 1.3 V

With a low gate trigger voltage of 1.3 V, this TRIAC can be easily triggered, enhancing control over electronic circuits.

Case Connection: MAIN TERMINAL 2

Main terminal 2 configuration aids in efficient current handling and ensures stable performance in multi-terminal applications.

Repetitive Peak Off-state Voltage: 800 V

An impressive off-state voltage rating of 800 V allows this TRIAC to be used in high-voltage applications, offering versatility.

Minimum Critical Rate of Rise of Off-state Voltage: 400 V/us

A high critical rate of rise ensures fast operation, enabling the TRIAC to effectively handle transient voltage conditions.

Maximum Holding Current: 35 mA

A maximum holding current of 35 mA ensures stable operation under low load conditions, enhancing the TRIAC's reliability in diverse applications.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB08-800CWRG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

400 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

35 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

1 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTB08-800CWRG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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