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BTB04-200T

STMicroelectronics

BTB04-200T by STMicroelectronics

The STMicroelectronics BTB04-200T is a TRIAC with 4A max RMS on-state current, 5mA max DC gate trigger current, and 200V repetitive peak off-state voltage. It operates b/w -40 °C to 110°C, making it suitable for AC power control applications in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,859 parts In-Stock

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3,859

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Anansix

USA . 1,456 parts In-Stock

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1,456

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Digiode

USA . 1,222 parts In-Stock

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1,222

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,268 parts In-Stock

1+ parts

$4.460

100+ parts

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$4.014

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$4.460

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$4.014

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MKK Technologies

India . 1,657 parts In-Stock

1+ parts

$8.387

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1,657

$8.387

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DigiPath Technology Company

USA . 1,657 parts In-Stock

1+ parts

$8.387

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1,657

$8.387

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Corphita

USA . 4,941 parts In-Stock

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4,941

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Northwest PG Solutions

USA . 2,213 parts In-Stock

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2,213

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Parana Technologies

USA . 228 parts In-Stock

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$5.333

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228

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$5.333

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Native Components

USA . 69 parts In-Stock

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69

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Overview

Enhance your electrical projects with the BTB04-200T from STMicroelectronics, a leading manufacturer known for quality and reliability. As a Triode For Alternating Current (TRIAC), this versatile component offers a maximum RMS On-state Current of 4A and a Repetitive Peak Off-state Voltage of 200V, making it ideal for a wide range of applications. With a Maximum DC Gate Trigger Voltage of 2.5V and a Trigger Device Type of TRIAC, this product ensures precise control and efficiency in your designs. Trust in STMicroelectronics to deliver superior performance and durability, providing you with the value and benefits you need for success in your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current ensures efficient and precise control for the TRIAC, enhancing its performance and reliability.

Maximum Leakage Current: 0.75 mA

Low leakage current enhances the efficiency of the TRIAC by minimizing wastage of power and ensuring stable operation.

Maximum Operating Temperature: 110 °C

High operating temperature range allows the TRIAC to function effectively in a variety of environmental conditions without overheating.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures ensures the TRIAC can be used in both extreme hot and cold environments, making it versatile.

Maximum RMS On-state Current: 4 A

High RMS on-state current rating enables the TRIAC to handle heavy loads effectively, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient and reliable triggering of the TRIAC, improving its overall performance.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating ensures the TRIAC can withstand voltage spikes and surges, enhancing its durability and reliability.

Minimum Critical Rate of Rise of Commutation Voltage: 1 V/us

Low critical rate of rise of commutation voltage helps in smooth switching of the TRIAC, reducing the chances of voltage spikes and disturbances.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Low critical rate of rise of off-state voltage ensures stable operation of the TRIAC, preventing false triggering and malfunctions.

Maximum Holding Current: 15 mA

High holding current ensures the TRIAC remains in the on-state even after the gate current is removed, enhancing its reliability in continuous operation.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB04-200T attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

1 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

15 mA

JESD-609 Code:

e0

Maximum Leakage Current:

.75 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

Trade Compliance

BTB04-200T Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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