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BTB04-400T/F2

STMicroelectronics

BTB04-400T/F2 by STMicroelectronics

STMicroelectronics BTB04-400T/F2 is a TRIAC with 400V repetitive peak off-state voltage, 4A max RMS on-state current, and 5mA max DC gate trigger current. It's used in applications requiring AC power control like dimmers and motor speed controllers.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,717 parts In-Stock

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Vyrian

USA . 983 parts In-Stock

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983

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Anansix

USA . 285 parts In-Stock

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285

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 207 parts In-Stock

1+ parts

$2.156

100+ parts

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$1.940

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207

$2.156

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$1.940

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MKK Technologies

India . 748 parts In-Stock

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$4.053

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748

$4.053

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DigiPath Technology Company

USA . 748 parts In-Stock

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$4.053

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748

$4.053

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Corphita

USA . 2,515 parts In-Stock

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Northwest PG Solutions

USA . 1,012 parts In-Stock

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1,012

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Parana Technologies

USA . 743 parts In-Stock

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$2.577

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743

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$2.577

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Native Components

USA . 741 parts In-Stock

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741

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Overview

Unlock the power of reliable and high-quality electrical components with the BTB04-400T/F2 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers unmatched performance and durability in their Triode For Alternating Current (TRIAC) products. Ideal for a wide range of applications, this TRIAC offers customers value, benefits, and advantages that are second to none. Trust STMicroelectronics to provide you with the quality and innovation you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and good insulation, making this product suitable for various environments.

Maximum DC Gate Trigger Current: 5 mA

Low trigger current ensures efficient control and operation of the TRIAC, contributing to energy efficiency.

Configuration: SINGLE

SINGLE configuration simplifies installation and circuit design, making it user-friendly.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and enabling compact designs.

Package Shape: RECTANGULAR

RECTANGULAR shape provides stability and easy handling during installation.

Terminal Form: GULL WING

GULL WING terminals facilitate soldering and ensure secure connections.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low leakage current helps in reducing power consumption and improving efficiency of the TRIAC.

No. of Terminals: 3

Having 3 terminals allows for easy connection and control of the TRIAC in various circuit layouts.

Package Style (Meter): FLANGE MOUNT

FLANGE MOUNT style offers stability and easy mounting on different surfaces.

Maximum Operating Temperature: 110 °C

High operating temperature range ensures reliable performance in a wide range of environmental conditions.

Trigger Device Type: TRIAC

TRIAC type trigger device is suitable for alternating current control applications, providing versatility.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in cold environments without compromising performance.

Terminal Position: SINGLE

SINGLE terminal position simplifies installation and ensures proper alignment in the circuit.

Maximum RMS On-state Current: 4 A

High on-state current rating allows for handling larger loads and ensures efficient operation of the TRIAC.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage ensures efficient control and reliable triggering of the TRIAC.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage ensures safe operation and reliability in high voltage applications.

Maximum Holding Current: 15 mA

High holding current ensures stable operation and prevents false triggering of the TRIAC.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB04-400T/F2 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

15 mA

JESD-30 Code:

R-PSFM-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

400 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

BTB04-400T/F2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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