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BTB06-800TWRG

STMicroelectronics

BTB06-800TWRG by STMicroelectronics

BTB06-800TWRG by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 6 A and repetitive peak off-state voltage of 800 V. It operates b/w -40 °C to 125 °C with a gate trigger current of just 5 mA. Ideal for controlling motors and lighting systems, it ensures efficient performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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EBV Elektronik

Germany . 8,000 parts In-Stock

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8,000

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Vyrian

USA . 8,523 parts In-Stock

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8,523

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R&J Components

USA . 1,850 parts In-Stock

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1,850

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Digiode

USA . 934 parts In-Stock

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934

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Anansix

USA . 408 parts In-Stock

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408

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IDEA Electronic Components Group

UK . 2,206 parts In-Stock

1+ parts

$2.548

100+ parts

-

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$2.294

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2,206

$2.548

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$2.294

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MKK Technologies

India . 961 parts In-Stock

1+ parts

$4.792

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961

$4.792

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DigiPath Technology Company

USA . 961 parts In-Stock

1+ parts

$4.792

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961

$4.792

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Microchip USA

USA . 145 parts In-Stock

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$5.055

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145

$5.055

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AZTECH Wire

Italy . 929 parts In-Stock

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$19.100

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929

$19.100

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Perfect Parts

USA . 3,518 parts In-Stock

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3,518

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Corphita

USA . 3,143 parts In-Stock

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3,143

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Parana Technologies

USA . 1,070 parts In-Stock

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$3.047

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1,070

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$3.047

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Native Components

USA . 902 parts In-Stock

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902

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Northwest PG Solutions

USA . 52 parts In-Stock

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52

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Overview

Unlock reliable performance with the BTB06-800TWRG TRIAC from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for efficiency and resilience, this versatile component excels in a wide range of applications, from lighting controls to motor drives. Enjoy superior quality and robust design that ensures longevity and stability in your projects, making it the perfect choice for engineers seeking both value and peace of mind. Choose STMicroelectronics for unparalleled reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent insulation properties and durability, making this TRIAC suitable for a variety of environments.

Maximum DC Gate Trigger Current: 5 mA

A low trigger current of 5 mA allows easy interfacing with low-power control circuits, making it energy-efficient.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for efficient space utilization in applications.

Package Shape: RECTANGULAR

The rectangular shape is optimal for PCB designs, allowing for compact layouts and efficient usage of board space.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide reliable mechanical and electrical connections, enhancing the product's robustness in durable applications.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss and improves overall energy efficiency in the circuit.

No. of Terminals: 3

Three terminals allow for straightforward integration into circuits while supporting various control configurations.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides easy installation and robust support, making it suitable for demanding applications.

Maximum Operating Temperature: 125 °C

A high operating temperature rating means this TRIAC can function effectively in warmer environments, expanding its application range.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Supports operation in four quadrants, making it versatile for various AC control applications including dimmers and motor controls.

Minimum Operating Temperature: -40 °C

A wide operating temperature range (-40 °C to 125 °C) allows the device to be used in extreme conditions without compromising performance.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and resist corrosion, ensuring long-term reliability in various environments.

Terminal Position: SINGLE

Single terminal positioning aids in straightforward PCB assembly and minimizes layout complexity.

Maximum RMS On-state Current: 6 A

Supports substantial on-state currents, making it suitable for driving larger loads in AC applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage facilitates low-voltage control signals, increasing compatibility with a wide range of devices.

Case Connection: MAIN TERMINAL 2

Designated case connection enhances current handling capabilities and ensures reliability in operation.

Repetitive Peak Off-state Voltage: 800 V

A high voltage rating allows the TRIAC to handle significant voltage spikes, making it suitable for robust AC switching applications.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

A high critical rate ensures the device can handle fast voltage changes without failure, adding to its reliability in dynamic conditions.

Maximum Holding Current: 10 mA

The ability to maintain function at low holding currents enhances safety and efficiency, allowing for effective control in various applications.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB06-800TWRG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

1 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTB06-800TWRG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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