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MAC997B8RLRPG

Onsemi

MAC997B8RLRPG by Onsemi

MAC997B8RLRPG by Onsemi is a single TRIAC with a max RMS on-state current of 0.8A and repetitive peak off-state voltage of 600V. It is ideal for applications requiring a 4 quadrant logic level TRIAC, such as in AC power control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,125 parts In-Stock

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Vyrian

USA . 408 parts In-Stock

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SupplyDigital Components

Austria . 7,968 parts In-Stock

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TANS Electronics

Latvia . 6,068 parts In-Stock

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Problanco Electronics

Mexico . 3,579 parts In-Stock

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Kulean Microsystems

USA . 1,435 parts In-Stock

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Corphita

USA . 769 parts In-Stock

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UHIMA Technologies

Türkiye . 198 parts In-Stock

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Corohmni

South Africa . 119 parts In-Stock

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Overview

Discover the MAC997B8RLRPG by Onsemi, a high-quality TRIAC perfect for a wide range of applications. Manufactured by industry leader Onsemi, this TRIAC offers unmatched reliability and performance. With a maximum RMS On-state Current of 0.8 A and a Repetitive Peak Off-state Voltage of 600 V, this product is designed to meet your needs with ease. From lighting control to motor speed regulation, this TRIAC is versatile and efficient. Trust in Onsemi's reputation for excellence and experience the value and benefits of the MAC997B8RLRPG today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 5 mA

Allows for precise control over the triggering of the TRIAC, leading to reliable performance in various applications.

Configuration: SINGLE

Simplifies the design and implementation of the product, making it easier to incorporate into different systems.

Package Shape: ROUND

Facilitates easy installation and handling, especially in applications where space is limited.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections, reducing the risk of loose connections or intermittent faults.

Maximum Leakage Current: 0.01 mA

Ensures minimal power loss when the TRIAC is in the off state, improving energy efficiency.

No. of Terminals: 3

Provides the necessary connections for power input, output, and gate control, making the product versatile for different setups.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-saving design, making it suitable for applications where size is a consideration.

Maximum Operating Temperature: 110 °C

Can withstand high temperatures, allowing for reliable operation even in demanding environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Provides efficient and precise control over the TRIAC, enabling accurate switching and performance in various circuits.

Minimum Operating Temperature: -40 °C

Capable of operating in low temperatures, making it suitable for applications in cold environments.

Terminal Finish: TIN SILVER COPPER

Ensures good conductivity and corrosion resistance, leading to reliable connections and long-term performance.

Terminal Position: BOTTOM

Facilitates easy and secure mounting on circuit boards or heat sinks, enhancing the overall reliability of the product.

Maximum RMS On-state Current: 0.8 A

Suitable for handling moderate current loads, making it versatile for various power control applications.

Maximum DC Gate Trigger Voltage: 2 V

Requires low voltage for triggering, enabling efficient and precise control over the TRIAC's switching operation.

Repetitive Peak Off-state Voltage: 600 V

Can handle high voltages, making it suitable for applications where voltage spikes or surges may occur.

Minimum Critical Rate of Rise of Off-state Voltage: 20 V/us

Provides protection against rapid voltage changes, ensuring the TRIAC's stability and longevity in operation.

Maximum Holding Current: 10 mA

Allows for reliable latching of the TRIAC in the on state, preventing unintentional switching or disruptions in operation.

Peak Reflow Temperature °C: 260

Capable of withstanding high temperatures during the manufacturing process, ensuring durability and reliability of the product.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC997B8RLRPG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.01 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

MAC997B8RLRPG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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