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71V65603S133BQGI8

Renesas Electronics

71V65603S133BQGI8 by Renesas Electronics

The Renesas Electronics 71V65603S133BQGI8 is a ZBT SRAM with a memory density of 9437184 bit. It operates at a max clock frequency of 133 MHz and has an access time of 4.2 ns. This SRAM is commonly used in industrial applications that require fast and reliable memory storage.

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Overview

Experience exceptional quality and performance with the 71V65603S133BQGI8 by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers superior products that meet the highest standards. This ZBT SRAM offers unparalleled speed and reliability, making it ideal for a wide range of applications. With a maximum clock frequency of 133 MHz and a memory density of 9437184 bits, this SRAM provides lightning-fast data access and ample storage capacity. Its compact design and surface mount capability ensure easy integration into any project. Upgrade your technology with the 71V65603S133BQGI8 and enjoy the benefits of Renesas Electronics' cutting-edge solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight construction for the SRAM, ensuring long-lasting performance without adding unnecessary weight.

Surface Mount: YES

Allows for easy and efficient installation of the SRAM onto circuit boards, reducing assembly time and effort.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers, ensuring reliable and accurate communication between the SRAM and other components for efficient data processing.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a low voltage, promoting energy efficiency and minimizing power consumption for cost-effective and eco-friendly usage.

No. of Terminals: 165

Offers a wide range of connection points, enabling seamless integration with other electronic components for enhanced functionality and customization.

Maximum Operating Temperature: 85°C

Withstands high operating temperatures, ensuring reliable performance even under demanding conditions, reducing the risk of malfunctions.

Memory Density: 9437184 bit

Provides an ample amount of memory storage, allowing for the efficient storage of data, programs, and instructions, enabling smooth and uninterrupted operation.

Maximum Access Time: 4.2 ns

Delivers fast access times, ensuring quick retrieval and manipulation of data, enhancing overall system performance and responsiveness.

Technology: CMOS

Utilizes CMOS technology, which offers low power consumption, high noise immunity, and increased scalability, resulting in energy-efficient and reliable operations.

Parallel or Serial: PARALLEL

Supports parallel data transfer, enabling faster and simultaneous transmission of multiple data bits, optimizing data throughput and speeding up processing tasks.

Maximum Clock Frequency (fCLK): 133 MHz

Operates at a high clock frequency, facilitating rapid data processing, improving system efficiency, and enabling the SRAM to handle demanding applications effectively.

Memory IC Type: ZBT SRAM

Features Zero Bus Turnaround (ZBT) technology, reducing latency and enabling consecutive read and write operations without degrading system performance, enhancing overall efficiency.

Technical Specifications

SRAM 71V65603S133BQGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

4.2 ns

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

15 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.06 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

320 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Trade Compliance

71V65603S133BQGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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