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71V65703S85BGGI8

Renesas Electronics

71V65703S85BGGI8 by Renesas Electronics

Renesas Electronics' 71V65703S85BGGI8 is a 256Kx36 ZBT SRAM with 8.5ns access time, operating at 3.3V. It features synchronous operation, industrial temperature grade, and parallel interface. Ideal for high-speed memory applications requiring fast data retrieval in industrial environments.

Median Price

$30.064

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 35 parts In-Stock

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VNN

France . 2,813 parts In-Stock

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Vyrian

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AZTECH Wire

Italy . 457 parts In-Stock

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Semicontronic

India . 324 parts In-Stock

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$14.000

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$13.650

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$13.580

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Ampacity Inc.

Singapore . 411 parts In-Stock

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Continental Prestige Electronics

USA . 842 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,649 parts In-Stock

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Microchip USA

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Argo Parts USA

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Robosynatics

Brazil . 2,000 parts In-Stock

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$2.202

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Lucentia Tech

USA . 2,000 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$28.561

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$27.960

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Overview

Elevate your electronics projects with the 71V65703S85BGGI8 by Renesas Electronics, a top-tier ZBT SRAM module designed to deliver exceptional performance and reliability. Renowned for their cutting-edge technology and innovative solutions, Renesas Electronics ensures that this SRAM package offers seamless integration, fast access times, and robust memory density. Ideal for industrial applications requiring high-speed data processing, this synchronous SRAM boasts a superior memory width of 36 bits and a nominal supply voltage of 3.3V, making it a standout choice for professionals seeking premium quality components. Upgrade your systems today with Renesas Electronics' 71V65703S85BGGI8 for unparalleled efficiency and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred efficiently and accurately within the SRAM.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for efficient and stable performance of the SRAM.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments with varying operating conditions.

Memory IC Type: ZBT SRAM

ZBT (Zero Bus Turnaround) technology reduces latency and allows for faster access times, enhancing overall performance of the SRAM.

Maximum Access Time: 8.5 ns

Low access time ensures fast read and write operations, making it ideal for high-speed applications.

Technical Specifications

SRAM 71V65703S85BGGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

8.5 ns

Additional Features:

FLOW-THROUGH

JESD-30 Code:

R-PBGA-B119

JESD-609 Code:

e1

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

119

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

71V65703S85BGGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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