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71V67603S133BQGI8

Renesas Electronics

71V67603S133BQGI8 by Renesas Electronics

Renesas Electronics 71V67603S133BQGI8 is a 256Kx36 SRAM with synchronous operation at 133 MHz clock frequency. It has a thin profile grid array package, operates at industrial temperature grade, and is ideal for high-speed memory applications.

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Overview

Experience seamless performance and reliability with the 71V67603S133BQGI8 by Renesas Electronics, a top-notch SRAM memory solution designed to elevate your applications. Renowned for its superior quality and cutting-edge technology, Renesas Electronics delivers unparalleled value with this product, offering customers unmatched benefits and advantages. Whether you're in industrial automation, telecommunications, or automotive electronics, this memory device ensures optimal functionality and efficiency, making it the ideal choice for your next project. Elevate your performance with Renesas Electronics today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection for the internal components of the SRAM, ensuring reliable performance even in challenging environments.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination between the memory and other components in the system, improving overall efficiency and performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V ensures compatibility with standard power supplies and is energy efficient.

Maximum Clock Frequency (fCLK): 133 MHz

High clock frequency of 133 MHz enables fast data transfer and processing speeds, making the SRAM suitable for high-performance applications.

Maximum Access Time: 4.2 ns

The low access time of 4.2 ns ensures quick retrieval of data, enhancing the responsiveness and efficiency of the SRAM.

Technical Specifications

SRAM 71V67603S133BQGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

4.2 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

15 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.07 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

280 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Trade Compliance

71V67603S133BQGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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