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71V65603S133PFGI8

Renesas Electronics

71V65603S133PFGI8 by Renesas Electronics

Renesas Electronics' 71V65603S133PFGI8 is a 256Kx36 ZBT SRAM with synchronous operation at 133 MHz. It features a low profile flatpack package, operates at industrial temperature range, and has a memory density of 9437184 bits. Ideal for high-speed applications requiring fast access times and reliable data storage.

Median Price

$24.709

Lifecycle Status

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3

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1k+

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Nova Conductors

Japan . 50 parts In-Stock

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Vyrian

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AZTECH Wire

Italy . 602 parts In-Stock

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Semicontronic

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Continental Prestige Electronics

USA . 4,212 parts In-Stock

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Netroflash

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Ampacity Inc.

Singapore . 609 parts In-Stock

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Microchip USA

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Component Stockers USA

USA . 415 parts In-Stock

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Argo Parts USA

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Overview

Unlock the power of high-performance memory with the Renesas Electronics 71V65603S133PFGI8 ZBT SRAM. Renowned for their top-quality products, Renesas Electronics delivers cutting-edge technology that ensures reliability and efficiency. Ideal for industrial applications, this synchronous SRAM offers a seamless user experience with its common input/output type and 3-state output characteristics. With a maximum clock frequency of 133 MHz and a memory density of 9437184 bits, this SRAM provides unparalleled speed and storage capacity. Elevate your projects with the Renesas Electronics 71V65603S133PFGI8 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto PCBs.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures reliable and coordinated data transfers.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is a common standard, ensuring compatibility with a wide range of systems.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, the product can withstand demanding industrial conditions.

Technology: CMOS

The CMOS technology offers low power consumption and fast operation.

Memory IC Type: ZBT SRAM

ZBT SRAM (Zero Bus Turnaround SRAM) provides high-speed access to memory with zero bus turnaround delay.

Technical Specifications

SRAM 71V65603S133PFGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

4.2 ns

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.06 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

320 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71V65603S133PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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