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71V67703S80PFGI8

Renesas Electronics

71V67703S80PFGI8 by Renesas Electronics

Renesas Electronics 71V67703S80PFGI8 is a 256Kx36 CACHE SRAM with synchronous operation, 100 MHz clock frequency, and 3.3V supply voltage. Ideal for industrial applications requiring fast access times and low power consumption.

Median Price

$28.416

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$28.416

100+ parts

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50

$28.416

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VNN

France . 10,438 parts In-Stock

1+ parts

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10,438

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Vyrian

USA . 1,196 parts In-Stock

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1,196

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 738 parts In-Stock

1+ parts

$6.601

100+ parts

-

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738

$6.601

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Ampacity Inc.

Singapore . 402 parts In-Stock

1+ parts

$18.000

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402

$18.000

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Continental Prestige Electronics

USA . 3,939 parts In-Stock

1+ parts

$28.416

100+ parts

-

1k+ parts

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$27.848

3,939

$28.416

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-

$27.848

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$28.420

100+ parts

$26.999

1k+ parts

-

10k+ parts

$25.294

300

$28.420

$26.999

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$25.294

Microchip USA

USA . 2,038 parts In-Stock

1+ parts

$68.216

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2,038

$68.216

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Component Stockers USA

USA . 102 parts In-Stock

1+ parts

$329.950

100+ parts

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102

$329.950

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Argo Parts USA

USA . 3,757 parts In-Stock

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3,757

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Overview

Elevate your electronic devices to new heights with the Renesas Electronics 71V67703S80PFGI8 CACHE SRAM. Renowned for its top-notch quality and reliability, Renesas Electronics delivers a high-performance memory solution that guarantees seamless operation in industrial settings. Perfect for applications requiring fast access times and efficient data processing, this CACHE SRAM offers a memory density of 9437184 bits and a lightning-fast maximum clock frequency of 100 MHz. Trust Renesas Electronics to provide you with a cutting-edge memory IC that will elevate your products to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the SRAM, ensuring reliable performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and facilitating automated assembly processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and predictable rate, improving overall system performance.

Maximum Clock Frequency (fCLK): 100 MHz

High clock frequency enables fast data processing and access times, making the SRAM suitable for demanding applications that require quick response times.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the SRAM energy-efficient and reliable in various operating conditions.

Memory IC Type: CACHE SRAM

Cache SRAM design provides high-speed access to frequently used data, improving system performance and reducing latency during data retrieval.

Technical Specifications

SRAM 71V67703S80PFGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

8 ns

Additional Features:

FLOW-THROUGH ARCHITECTURE

Maximum Clock Frequency (fCLK):

100 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.07 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

230 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71V67703S80PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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