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71V65703S80BQGI8

Renesas Electronics

71V65703S80BQGI8 by Renesas Electronics

Renesas Electronics' 71V65703S80BQGI8 is a 256Kx36 ZBT SRAM with 95 MHz clock frequency, operating at 3.3V. It features synchronous operation, 3-STATE output, and thin profile grid array package. Ideal for industrial applications requiring fast access time and high memory density.

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1k+

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$0.970

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Ampacity Inc.

Singapore . 319 parts In-Stock

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AZTECH Wire

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Overview

Enhance your projects with the high-quality 71V65703S80BQGI8 ZBT SRAM by Renesas Electronics. Designed for industrial applications, this synchronous memory module offers a fast access time of 8 ns and a maximum clock frequency of 95 MHz, ensuring optimal performance. With a memory density of 9437184 bits and a 256K word code, this versatile SRAM is perfect for a wide range of parallel applications. Trust Renesas Electronics to deliver reliable products that meet your memory needs efficiently. Elevate your designs with the 71V65703S80BQGI8 and experience seamless operation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Surface Mount: YES

Allows for easy installation onto circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer and processing, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Offers a standard voltage level for stable and reliable operation in various applications.

Maximum Clock Frequency (fCLK): 95 MHz

Supports high-speed data processing and communication, improving overall system efficiency.

Memory IC Type: ZBT SRAM

Utilizes Zero Bus Turnaround technology for faster read and write operations, enhancing overall memory performance.

Technical Specifications

SRAM 71V65703S80BQGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

8 ns

Additional Features:

FLOW-THROUGH ARCHITECTURE

Maximum Clock Frequency (fCLK):

95 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

15 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.06 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Trade Compliance

71V65703S80BQGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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