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71V65703S85BQGI8

Renesas Electronics

71V65703S85BQGI8 by Renesas Electronics

Renesas Electronics' 71V65703S85BQGI8 is a 256Kx36 ZBT SRAM with 90 MHz clock frequency, operating at 3.3V. It features synchronous operation, 3-STATE output, and industrial temperature grade suitability. Ideal for applications requiring high-speed parallel memory access in industrial environments.

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AZTECH Wire

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Continental Prestige Electronics

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Overview

Experience unparalleled speed and reliability with the 71V65703S85BQGI8 by Renesas Electronics. Renowned for their cutting-edge technology and commitment to excellence, Renesas Electronics delivers high-quality SRAM memory solutions that cater to a wide range of industrial applications. This ZBT SRAM memory module boasts a robust design, fast access time of 8.5 ns, and a 90 MHz clock frequency, ensuring optimal performance in demanding environments. Upgrade your systems with Renesas Electronics and enjoy seamless operation and enhanced productivity like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and flexibility, making the product resistant to physical damage.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

Provides a compact and space-efficient design, ideal for applications with limited space.

Operating Mode: SYNCHRONOUS

Ensures synchronized data transfer, improving the overall performance and reliability of the product.

Input/Output Type: COMMON

Offers compatibility with a wide range of devices, enhancing versatility and usability.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage level, ensuring stable performance.

Power Supplies (V): 3.3

Provides consistent power supply, preventing data loss or corruption during operation.

No. of Terminals: 165

Offers a high number of terminals for connectivity and data transfer, suitable for complex applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE

Features a space-saving design with a grid array layout, making it suitable for compact electronic devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial and harsh environments.

Technical Specifications

SRAM 71V65703S85BQGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

8.5 ns

Additional Features:

FLOW-THROUGH ARCHITECTURE

Maximum Clock Frequency (fCLK):

90 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

15 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.06 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Trade Compliance

71V65703S85BQGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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