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71V65603S133BQI

Integrated Device Technology

71V65603S133BQI by Integrated Device Technology

ZBT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: TBGA; Package Shape: RECTANGULAR; Technology: CMOS;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 146 parts In-Stock

1+ parts

$12.161

100+ parts

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1k+ parts

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10k+ parts

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146

$12.161

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Northwest PG Solutions

USA . 713 parts In-Stock

1+ parts

$13.377

100+ parts

$12.039

1k+ parts

-

10k+ parts

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713

$13.377

$12.039

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Microchip USA

USA . 1,905 parts In-Stock

1+ parts

$65.681

100+ parts

-

1k+ parts

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10k+ parts

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1,905

$65.681

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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7,000

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Technical Specifications

SRAM 71V65603S133BQI attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

4.2 ns

Additional Features:

BURST COUNTER

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e0

Length:

15 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.06 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

320 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Trade Compliance

71V65603S133BQI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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