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SMA3001

Onsemi

SMA3001 by Onsemi

SMA3001 by Onsemi is a wide band low power RF amplifier with 20 dB gain. It operates from 10 MHz to 2000 MHz, suitable for various RF applications. With a max input power of 0 dBm and 3V power supply, it is ideal for surface mount construction in RF systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,337 parts In-Stock

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1,337

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Digiode

USA . 1,200 parts In-Stock

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1,200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,631 parts In-Stock

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7,631

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SupplyDigital Components

Austria . 4,196 parts In-Stock

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Kulean Microsystems

USA . 3,197 parts In-Stock

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3,197

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TANS Electronics

Latvia . 1,357 parts In-Stock

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1,357

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Corohmni

South Africa . 397 parts In-Stock

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397

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Corphita

USA . 353 parts In-Stock

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353

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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Overview

Elevate your RF and microwave amplification with the SMA3001 by Onsemi. Crafted with precision and quality in mind, Onsemi is a trusted name in the industry known for delivering top-notch products. The SMA3001 offers a wide band low power solution with a gain of 20 dB, making it perfect for a variety of applications. From telecommunications to aerospace, this component is sure to provide the performance and reliability you need. Experience the value and benefits of choosing Onsemi for all your RF and microwave amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight and durable, making this amplifier easy to handle and long-lasting.

Maximum Input Power (CW): 0 dBm

With a maximum input power of 0 dBm, this amplifier can handle a wide range of input signals without distortion or damage.

Construction: COMPONENT

The component-based construction ensures reliability and ease of maintenance for this amplifier.

Power Supplies (V): 3

Operating at a low voltage of 3V makes this amplifier energy-efficient and suitable for various power supply setups.

No. of Terminals: 6

Having 6 terminals allows for versatile connectivity options and integration into different systems.

Maximum Supply Current: 15 mA

The low maximum supply current of 15 mA ensures efficient power usage and minimizes heat dissipation.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wideband low power device, this amplifier is ideal for applications requiring a broad frequency range and low power consumption.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF systems and components.

Gain: 20 dB

A gain of 20 dB ensures that the output signal is amplified effectively, improving overall system performance.

Minimum Operating Frequency: 10 MHz

The minimum operating frequency of 10 MHz allows for signal amplification across a wide spectrum of frequencies.

Mounting Feature: SURFACE MOUNT

The surface mount feature makes installation and integration of this amplifier easy and convenient in various setups.

Maximum Operating Frequency: 2000 MHz

With a maximum operating frequency of 2000 MHz, this amplifier is suitable for high-frequency applications requiring amplification.

Technical Specifications

RF & Microwave Amplifiers SMA3001 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

20 dB

Maximum Input Power (CW):

0 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

2000 MHz

Minimum Operating Frequency:

10 MHz

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

3

RF or Microwave Device Type:

Maximum Supply Current:

15 mA

Trade Compliance

SMA3001 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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