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SMA3107

Onsemi

SMA3107 by Onsemi

SMA3107 by Onsemi is a wide band low power RF amplifier with 21 dB gain. It operates on 3V supply, has 6 terminals, and consumes up to 7.7 mA current. With a temperature range of -40 °C to 85°C, it is ideal for surface mount applications in RF and microwave circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,539 parts In-Stock

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Vyrian

USA . 1,408 parts In-Stock

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Kulean Microsystems

USA . 6,080 parts In-Stock

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Problanco Electronics

Mexico . 5,452 parts In-Stock

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SupplyDigital Components

Austria . 2,523 parts In-Stock

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TANS Electronics

Latvia . 1,041 parts In-Stock

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Corphita

USA . 404 parts In-Stock

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UHIMA Technologies

Türkiye . 376 parts In-Stock

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Corohmni

South Africa . 168 parts In-Stock

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Overview

Unleash the power of innovation with the SMA3107 by Onsemi. Built with precision and expertise, this RF & Microwave Amplifier offers unmatched quality and reliability for a variety of applications. With a wide band low power design and 21 dB gain, this component provides exceptional performance in a compact package. Whether you're enhancing communication systems or optimizing signal processing, the SMA3107 delivers value, efficiency, and superior results that will elevate your projects to new heights. Trust Onsemi to bring you cutting-edge technology that exceeds expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for a wide range of applications.

Construction: COMPONENT

Being a component-based construction, the product can be easily integrated into various RF and microwave systems for enhanced performance.

Power Supplies (V): 3

Operating at a relatively low voltage of 3V makes this amplifier energy-efficient and suitable for battery-powered devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this amplifier can withstand high temperatures, ensuring reliable performance in challenging environments.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C makes this amplifier suitable for use in extreme cold conditions.

Maximum Supply Current: 7.7 mA

With a low maximum supply current of 7.7 mA, this amplifier is designed for efficient power consumption while delivering optimal performance.

RF or Microwave Device Type: WIDE BAND LOW POWER

The wideband low power design of this amplifier allows for signal amplification across a broad frequency range while consuming minimal power.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohm, this amplifier can easily interface with other RF components and systems for seamless integration.

Gain: 21 dB

A gain of 21 dB indicates that this amplifier can significantly boost the input signal strength, making it ideal for applications requiring signal amplification.

Mounting Feature: SURFACE MOUNT

The surface mount feature enables easy and secure attachment of this amplifier onto PCBs or other surfaces, simplifying the overall installation process.

Technical Specifications

RF & Microwave Amplifiers SMA3107 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

21 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

FL6,.06,25

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

7.7 mA

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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