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SMA3006

Onsemi

SMA3006 by Onsemi

SMA3006 by Onsemi is a wide band low power RF amplifier with 14 dB gain and 50 ohm impedance. It operates at frequencies up to 2000 MHz, with a max input power of 0 dBm. Ideal for applications requiring surface mount components in RF and microwave systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,281 parts In-Stock

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Digiode

USA . 649 parts In-Stock

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649

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TANS Electronics

Latvia . 8,014 parts In-Stock

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8,014

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Problanco Electronics

Mexico . 7,400 parts In-Stock

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7,400

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Kulean Microsystems

USA . 6,736 parts In-Stock

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SupplyDigital Components

Austria . 6,651 parts In-Stock

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Corphita

USA . 1,005 parts In-Stock

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UHIMA Technologies

Türkiye . 719 parts In-Stock

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719

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Corohmni

South Africa . 118 parts In-Stock

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Overview

Experience superior performance with the SMA3006 by Onsemi, a leading manufacturer of RF & Microwave Amplifiers. Designed for wide band low power applications, this component offers a gain of 14 dB and operates at frequencies up to 2000 MHz. With a durable plastic/epoxy package body, this amplifier provides reliable performance in a range of temperatures from -40 °C to 85°C. Trust Onsemi's expertise in RF technology and elevate your projects with the SMA3006's exceptional value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against environmental factors and ensures durability.

Maximum Input Power (CW): 0 dBm

Suitable for low power applications and ensures safe operation.

Construction: COMPONENT

High quality construction for reliable performance.

Power Supplies (V): 3

Efficient power usage with low voltage requirement.

No. of Terminals: 6

Allows for versatile connectivity options.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperatures for flexible use.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme cold conditions.

Maximum Supply Current: 5 mA

Low power consumption for energy efficiency.

RF or Microwave Device Type: WIDE BAND LOW POWER

Ideal for wideband applications requiring low power consumption.

Characteristic Impedance: 50 ohm

Compatible with common RF systems and components.

Gain: 14 dB

Provides signal amplification for improved performance.

Mounting Feature: SURFACE MOUNT

Easy installation and space-saving design.

Maximum Operating Frequency: 2000 MHz

Suitable for high frequency applications.

Technical Specifications

RF & Microwave Amplifiers SMA3006 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

14 dB

Maximum Input Power (CW):

0 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

2000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

3

RF or Microwave Device Type:

Maximum Supply Current:

5 mA

Trade Compliance

SMA3006 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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