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SMA3101

Onsemi

SMA3101 by Onsemi

SMA3101 by Onsemi is a RF & Microwave Amplifier with 21.5 dB Gain, 50 ohm Impedance, and 5V Power Supply. It is a WIDE BAND LOW POWER device suitable for surface mount applications in temperatures ranging from -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 407 parts In-Stock

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407

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Digiode

USA . 309 parts In-Stock

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309

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TANS Electronics

Latvia . 7,127 parts In-Stock

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SupplyDigital Components

Austria . 4,589 parts In-Stock

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Problanco Electronics

Mexico . 3,643 parts In-Stock

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Corphita

USA . 2,108 parts In-Stock

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Kulean Microsystems

USA . 869 parts In-Stock

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Kepictronics

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 424 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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Overview

Enhance your RF and microwave applications with the SMA3101 amplifier from Onsemi. Known for their high-quality components, Onsemi delivers reliable performance and exceptional value to customers. Whether you're looking to boost signal strength or improve overall system efficiency, the SMA3101 offers a wide band low power solution with a 21.5 dB gain. With a durable plastic/epoxy package and easy surface mount installation, this amplifier is designed to excel in a variety of operating temperatures, making it a versatile choice for your next project. Upgrade your systems today with the SMA3101 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is known for its durability and low cost, making the product reliable and cost-effective.

Power Supplies (V): 5

Operating at a low voltage of 5V makes this amplifier energy-efficient and suitable for various applications.

Technology: BIPOLAR

Bipolar technology provides high gain and frequency performance, making the amplifier suitable for wideband applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can withstand demanding operating conditions without overheating.

Characteristic Impedance: 50 ohm

Having a characteristic impedance of 50 ohm ensures efficient power transfer and compatibility with standard RF systems.

Gain: 21.5 dB

The high gain of 21.5 dB improves the signal strength of the input signal, resulting in better overall performance of the amplifier.

Mounting Feature: SURFACE MOUNT

The surface mount feature makes installation and integration of the amplifier easier, saving time and effort during assembly.

Technical Specifications

RF & Microwave Amplifiers SMA3101 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

21.5 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

12.6 mA

Technology:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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