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SMA3101-TL-E

Onsemi

SMA3101-TL-E by Onsemi

SMA3101-TL-E by Onsemi is a wide band low power RF amplifier with gain of 21.5 dB, operating from 100 MHz to 3000 MHz. It has a characteristic impedance of 50 ohm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain in a wide frequency range.

Median Price

$0.222

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,481 parts In-Stock

1+ parts

$0.330

100+ parts

$0.242

1k+ parts

$0.209

10k+ parts

-

1,481

$0.330

$0.242

$0.209

-

Farnell

UK . 17,442 parts In-Stock

1+ parts

-

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1k+ parts

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17,442

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-

-

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Rochester

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.178

1k+ parts

$0.147

10k+ parts

$0.132

15,000

-

$0.178

$0.147

$0.132

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

1+ parts

-

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-

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3,000

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Element14

Singapore . 2,442 parts In-Stock

1+ parts

-

100+ parts

$0.265

1k+ parts

$0.163

10k+ parts

-

2,442

-

$0.265

$0.163

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Mouser Electronics

USA . 548 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.139

548

-

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-

$0.139

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 915 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

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915

$0.139

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-

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Vyrian

USA . 1,273 parts In-Stock

1+ parts

$0.139

100+ parts

-

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10k+ parts

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1,273

$0.139

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Bristol Electronics

USA . 2,173 parts In-Stock

1+ parts

$0.551

100+ parts

$0.221

1k+ parts

$0.154

10k+ parts

$0.143

2,173

$0.551

$0.221

$0.154

$0.143

Flip Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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3,000

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Dan-Mar Components

USA . 2,173 parts In-Stock

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2,173

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,442 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

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10k+ parts

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2,442

$0.086

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-

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Ampacity Inc.

Singapore . 6,418 parts In-Stock

1+ parts

$0.118

100+ parts

-

1k+ parts

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6,418

$0.118

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Corphita

USA . 1,579 parts In-Stock

1+ parts

$0.131

100+ parts

-

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1,579

$0.131

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$0.139

100+ parts

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164

$0.139

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QUARKTWIN TECHNOLOGY LTD

USA . 22,905 parts In-Stock

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22,905

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Perfect Parts

USA . 10,013 parts In-Stock

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10,013

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Problanco Electronics

Mexico . 6,654 parts In-Stock

1+ parts

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6,654

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SupplyDigital Components

Austria . 6,582 parts In-Stock

1+ parts

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6,582

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Kulean Microsystems

USA . 5,770 parts In-Stock

1+ parts

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5,770

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Authorized Procurement Solutions

USA . 5,500 parts In-Stock

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5,500

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Kepictronics

USA . 2,230 parts In-Stock

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2,230

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TANS Electronics

Latvia . 2,065 parts In-Stock

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2,065

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Metaverse IC Inc.

Canada . 2,000 parts In-Stock

1+ parts

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2,000

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UHIMA Technologies

Türkiye . 290 parts In-Stock

1+ parts

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290

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Overview

Elevate your RF and microwave applications with the SMA3101-TL-E by Onsemi. Known for their top-notch quality and reliability, Onsemi amplifiers are a cut above the rest. This wide-band, low-power amplifier offers a gain of 21.5 dB, making it ideal for a variety of applications. From telecommunications to aerospace, this component ensures optimal performance and efficiency. Trust Onsemi to deliver premium products that exceed expectations. Experience the difference with the SMA3101-TL-E.

Feature Benefit Bullets

Maximum Operating Temperature: 85 °C

Allows for reliable operation in a wide range of environments, making it suitable for various applications.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures, ensuring performance even in extreme conditions.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Provides a durable and reliable connection, reducing the risk of signal loss or degradation.

RF or Microwave Device Type: WIDE BAND LOW POWER

Delivers a wide band of frequencies while maintaining low power consumption, making it versatile and efficient.

Characteristic Impedance: 50 ohm

Matches standard RF equipment, ensuring seamless integration and optimal performance.

Gain: 21.5 dB

Amplifies signals effectively, enhancing the overall performance of the system.

Minimum Operating Frequency: 100 MHz

Capable of operating at low frequencies, suitable for a wide range of applications that require varying frequency ranges.

Maximum Operating Frequency: 3000 MHz

Covering a broad frequency range, making it suitable for multiple applications that require high-frequency signals.

Technical Specifications

RF & Microwave Amplifiers SMA3101-TL-E attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

21.5 dB

JESD-609 Code:

e6

Maximum Operating Frequency:

3000 MHz

Minimum Operating Frequency:

100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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