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SMA3109

Onsemi

SMA3109 by Onsemi

SMA3109 by Onsemi is a RF & Microwave Amplifier with 21 dB Gain, 50 ohm Impedance, and operates at -40 to 85 °C. It has 6 terminals, requires 3V power supply at max current of 20.5 mA. Widely used in low-power wideband applications due to its surface mount feature and plastic/epoxy package body material.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,466 parts In-Stock

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Vyrian

USA . 264 parts In-Stock

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Kulean Microsystems

USA . 5,762 parts In-Stock

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TANS Electronics

Latvia . 1,849 parts In-Stock

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SupplyDigital Components

Austria . 1,808 parts In-Stock

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Problanco Electronics

Mexico . 1,342 parts In-Stock

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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Corohmni

South Africa . 312 parts In-Stock

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Corphita

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Overview

Elevate your RF and microwave amplification needs with the SMA3109 by Onsemi. Crafted with precision and expertise, this wide band low power amplifier boasts a gain of 21 dB, offering unmatched performance in a compact surface mount package. Perfect for a range of applications, from telecommunications to radar systems, this component provides reliable and efficient signal boosting capabilities. Trust in Onsemi's reputation for quality and innovation, and experience the difference in your project's performance with the SMA3109. Unlock the potential of your RF design with this powerful amplifier today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures that the amplifier is lightweight and durable, making it ideal for portable or rugged applications.

Power Supplies (V): 3

Operating at a relatively low voltage of 3V, this amplifier is energy-efficient and can be easily integrated into a variety of systems without the need for high power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this amplifier can withstand elevated temperatures and maintain its performance in challenging environments.

No. of Terminals: 6

The presence of 6 terminals allows for versatile connectivity options and easy integration into circuitry, enhancing the flexibility and usability of the amplifier.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures compatibility with standard RF systems and components, making this amplifier suitable for a wide range of applications.

Gain: 21 dB

With a gain of 21 dB, this amplifier can boost signals effectively while maintaining low noise levels, making it an efficient choice for amplifying RF and microwave signals.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy installation on circuit boards without the need for additional hardware, simplifying the assembly process and saving valuable space.

Technical Specifications

RF & Microwave Amplifiers SMA3109 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

21 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

FL6,.06,25

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

20.5 mA

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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