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SMA3005

Onsemi

SMA3005 by Onsemi

SMA3005 by Onsemi is a wide band low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates at frequencies up to 3000 MHz, with a max input power of 0 dBm. Ideal for applications requiring surface mount components in RF and microwave systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,188 parts In-Stock

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2,188

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Digiode

USA . 862 parts In-Stock

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862

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 5,447 parts In-Stock

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5,447

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Kulean Microsystems

USA . 4,844 parts In-Stock

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4,844

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Problanco Electronics

Mexico . 3,766 parts In-Stock

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3,766

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Corphita

USA . 1,075 parts In-Stock

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1,075

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UHIMA Technologies

Türkiye . 510 parts In-Stock

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510

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Corohmni

South Africa . 268 parts In-Stock

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SupplyDigital Components

Austria . 67 parts In-Stock

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Overview

Unleash the power of high-quality RF & Microwave Amplifiers with the SMA3005 by Onsemi. Designed to deliver superior performance and reliability, this component is a game-changer in the industry. From wide-band low power applications to surface mounting features, the SMA3005 offers unmatched value and benefits to customers. Whether you're a seasoned professional or just starting out in the field, this amplifier is your go-to solution for all your amplification needs. Trust Onsemi for cutting-edge technology and unparalleled quality that sets you apart from the competition. Elevate your projects with the SMA3005 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the amplifier lightweight and durable, ideal for applications where portability is required.

Maximum Input Power (CW): 0 dBm

The low maximum input power ensures that the amplifier is well-protected against high power inputs, increasing its reliability and longevity.

Construction: COMPONENT

The component-level construction allows for easy integration into existing systems or circuits, making it a versatile choice for various applications.

Power Supplies (V): 3

The low power supply requirement of 3V makes this amplifier energy-efficient and suitable for battery-operated devices or low power applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this amplifier can withstand high temperatures, ensuring reliable performance in diverse environments.

Minimum Operating Temperature: -40 °C

The wide operating temperature range from -40 to 85 °C ensures that the amplifier can operate effectively in extreme temperature conditions, making it versatile for various applications.

Maximum Supply Current: 8 mA

The low maximum supply current of 8 mA indicates the amplifier's energy efficiency, making it suitable for applications where power consumption is a concern.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power device, this amplifier can amplify a wide range of frequencies while consuming minimal power, making it a versatile choice for diverse RF and microwave applications.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures proper impedance matching with other components or devices, resulting in efficient signal transfer and minimal signal loss.

Gain: 12 dB

With a gain of 12 dB, this amplifier can boost the signal strength effectively without introducing excessive noise, making it a reliable choice for signal amplification.

Mounting Feature: SURFACE MOUNT

The surface mounting feature enables easy and secure installation of the amplifier on the PCB, simplifying the assembly process and saving space.

Maximum Operating Frequency: 3000 MHz

With a maximum operating frequency of 3000 MHz, this amplifier is suitable for high-frequency RF and microwave applications, offering reliable performance in frequency-sensitive systems.

Technical Specifications

RF & Microwave Amplifiers SMA3005 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

12 dB

Maximum Input Power (CW):

0 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

3000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

3

RF or Microwave Device Type:

Maximum Supply Current:

8 mA

Trade Compliance

SMA3005 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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