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SMA3109TL

Onsemi

SMA3109TL by Onsemi

SMA3109TL by Onsemi is a wide band low power RF amplifier with 21 dB gain. It operates b/w -40 to 85 °C, drawing a max of 20.5 mA at 3V. This surface mount component has a characteristic impedance of 50 ohm, making it ideal for RF and microwave applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 471 parts In-Stock

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Digiode

USA . 211 parts In-Stock

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TANS Electronics

Latvia . 6,117 parts In-Stock

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SupplyDigital Components

Austria . 2,427 parts In-Stock

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Corphita

USA . 972 parts In-Stock

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UHIMA Technologies

Türkiye . 695 parts In-Stock

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695

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Kulean Microsystems

USA . 190 parts In-Stock

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Problanco Electronics

Mexico . 186 parts In-Stock

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Corohmni

South Africa . 99 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the SMA3109TL by Onsemi. As a leader in RF & Microwave Amplifiers, Onsemi brings quality and reliability to every component they manufacture. The SMA3109TL offers wide band low power amplification with a gain of 21 dB, making it perfect for a variety of applications. Whether you're looking to enhance your communication systems or improve signal strength, this surface mount amplifier provides the performance and value you need to stay ahead in today's fast-paced market. Say goodbye to compromise and hello to unparalleled performance with the SMA3109TL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components, ensuring a longer lifespan for the amplifier.

Construction: COMPONENT

The component construction allows for easy integration into various electronic systems, making this amplifier versatile for different applications.

Power Supplies (V): 3

Operates on a low power supply of 3V, making it energy-efficient and suitable for battery-powered devices.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments up to 85 °C, making it suitable for industrial and outdoor applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this amplifier can withstand extreme cold conditions, ideal for outdoor use in various climates.

Maximum Supply Current: 20.5 mA

Requires a low supply current of 20.5 mA, minimizing power consumption and heat generation, suitable for applications where power efficiency is crucial.

RF or Microwave Device Type: WIDE BAND LOW POWER

A wideband low-power amplifier, providing amplification across a broad range of frequencies while maintaining low power consumption, making it versatile for different RF and microwave applications.

Characteristic Impedance: 50 ohm

Matches the standard impedance of 50 ohms, ensuring compatibility with most RF systems and reducing signal reflections for efficient signal transmission.

Gain: 21 dB

Delivers a gain of 21 dB, amplifying the input signal with high precision and clarity, making it suitable for applications requiring signal amplification.

Mounting Feature: SURFACE MOUNT

Designed for surface mount installation, allowing for easy and secure mounting on PCBs, saving space and simplifying the assembly process.

Technical Specifications

RF & Microwave Amplifiers SMA3109TL attributes and parameters. Explore more RF & Microwave Amplifiers devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

21 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

FL6,.06,25

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

20.5 mA

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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