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MBC13916NT1

NXP Semiconductors

MBC13916NT1 by NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.

Median Price

$0.393

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

MBC13916NT1 by NXP Semiconductors
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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.393

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650

$0.393

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Chip Stock

USA . 30,396 parts In-Stock

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30,396

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Digiode

USA . 4,038 parts In-Stock

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4,038

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Anansix

USA . 2,720 parts In-Stock

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2,720

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Vyrian

USA . 746 parts In-Stock

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746

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ComSIT Distribution GmbH

Germany . 168 parts In-Stock

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168

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ComSIT USA

USA . 168 parts In-Stock

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168

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PC Components Company LLC

USA . 25 parts In-Stock

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25

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Bristol Electronics

USA . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,972 parts In-Stock

1+ parts

$0.393

100+ parts

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1k+ parts

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10k+ parts

$0.381

3,972

$0.393

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$0.381

Continental Prestige Electronics

USA . 518 parts In-Stock

1+ parts

$0.393

100+ parts

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1k+ parts

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$0.385

518

$0.393

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$0.385

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.393

100+ parts

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100

$0.393

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AZTECH Wire

Italy . 746 parts In-Stock

1+ parts

$9.397

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746

$9.397

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One Stop Electronics

USA . 1,440 parts In-Stock

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$19.000

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1,440

$19.000

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Ampacity Inc.

Singapore . 463 parts In-Stock

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$22.000

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463

$22.000

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Perfect Parts

USA . 26,897 parts In-Stock

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26,897

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Lixinc

USA . 17,331 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,011 parts In-Stock

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6,011

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Kepictronics

USA . 4,007 parts In-Stock

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4,007

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GreenTree Electronics

Israel . 3,125 parts In-Stock

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UNI Independent Distributors

Spain . 1,837 parts In-Stock

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1,837

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Corphita

USA . 1,386 parts In-Stock

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1,386

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Authorized Procurement Solutions

USA . 800 parts In-Stock

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800

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Assy Fe

Spain . 7 parts In-Stock

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7

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Overview

Elevate your RF & Microwave Amplifier game with the MBC13916NT1 by NXP Semiconductors. Known for their top-notch quality and innovation, NXP delivers high-performance components that exceed industry standards. This wide band, low power amplifier offers a gain of 9.5 dB and operates seamlessly between 100 MHz to 2500 MHz. With a maximum input power of 10 dBm and a compact component construction, this amplifier is perfect for a variety of applications, from telecommunications to aerospace. Experience next-level performance and reliability with the MBC13916NT1 - your go-to choice for amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the amplifier easy to handle and long-lasting.

Maximum Input Power (CW): 10 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion.

Construction: COMPONENT

The component construction ensures high reliability and consistent performance over time.

Power Supplies (V): 2.7

The low power supply voltage of 2.7V makes this amplifier energy efficient and suitable for various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows this amplifier to operate efficiently in challenging environments.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40 to 85°C ensures this amplifier can be used in extreme conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides reliable electrical connections and protects against corrosion.

Technology: BICMOS

The use of BiCMOS technology combines the benefits of both bipolar and CMOS technologies, resulting in high performance and efficiency.

Maximum Supply Current: 5.6 mA

With a low maximum supply current, this amplifier is energy efficient and suitable for battery-operated devices.

RF or Microwave Device Type: WIDE BAND LOW POWER

This amplifier is designed for wideband applications and operates at low power, making it versatile and efficient.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures optimal signal transfer and compatibility with other RF components.

Gain: 9.5 dB

With a high gain of 9.5 dB, this amplifier can boost weak signals and improve overall system performance.

Minimum Operating Frequency: 100 MHz

The amplifier can operate at frequencies as low as 100 MHz, making it suitable for a wide range of RF applications.

Maximum Operating Frequency: 2500 MHz

The high maximum operating frequency of 2500 MHz allows this amplifier to handle a wide range of RF and microwave signals.

Technical Specifications

RF & Microwave Amplifiers MBC13916NT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

9.5 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e3

No. of Functions:

1

Maximum Operating Frequency:

2500 MHz

Minimum Operating Frequency:

100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOT-343R

Power Supplies (V):

2.7

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

5.6 mA

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

MBC13916NT1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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