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HMC478ST89ETR

Analog Devices

HMC478ST89ETR by Analog Devices

Analog Devices' HMC478ST89ETR is a wide band low power RF amplifier with 11 dB gain, operating from 0 to 4000 MHz. It has a max input power of 5 dBm and operates on a 5V supply with a current draw of 82 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 10,250 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

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Parana Technologies

USA . 3,557 parts In-Stock

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$1.080

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$1.004

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$1.080

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IDEA Electronic Components Group

UK . 589 parts In-Stock

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$1.161

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$1.103

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DigiPath Technology Company

USA . 786 parts In-Stock

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$1.811

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$1.739

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Aztec Data Supply Inc.

USA . 3,875 parts In-Stock

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$1.840

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$1.840

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Corohmni

South Africa . 353 parts In-Stock

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$2.116

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One Stop Electronics

USA . 1,297 parts In-Stock

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$4.000

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AZTECH Wire

Italy . 435 parts In-Stock

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$8.962

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Semicontronic

India . 945 parts In-Stock

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$31.000

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$30.225

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$30.070

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S.R.D Solutions

India . 20,000 parts In-Stock

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Lixinc

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Argo Parts USA

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RC Electronics

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Authorized Procurement Solutions

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Assy Fe

Spain . 1,000 parts In-Stock

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Continental Prestige Electronics

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Perfect Parts

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Kepictronics

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Corphita

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A-Z Elektronik GmbH

Germany . 347 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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Lucentia Tech

USA . 250 parts In-Stock

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Bastille Electronics

Australia . 95 parts In-Stock

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Overview

Elevate your RF and microwave applications with the HMC478ST89ETR by Analog Devices. Known for their top-notch quality and reliability, Analog Devices delivers superior performance in the realm of RF & Microwave Amplifiers. This wide-band, low-power device offers a gain of 11 dB, making it ideal for a variety of applications. With a maximum operating frequency of 4000 MHz and a compact surface mount design, this amplifier provides exceptional value and benefits to customers seeking high-performance solutions. Trust Analog Devices to elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability in various environmental conditions.

Maximum Input Power (CW): 5 dBm

With a maximum input power of 5 dBm, this amplifier can handle moderate power levels without distortion or damage.

Construction: COMPONENT

Component construction enables easy integration into RF and microwave systems.

Power Supplies (V): 5

Operates on a standard 5V power supply, making it compatible with existing systems.

No. of Terminals: 3

Simple 3-terminal design for easy connectivity and installation.

Maximum Operating Temperature: 85 °C

Wide operating temperature range of -40 to 85°C allows for use in various environments.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures, making it suitable for outdoor or harsh conditions.

Terminal Finish: MATTE TIN

Matte Tin terminal finish provides excellent solderability and conductivity.

Technology: BIPOLAR

Bipolar technology offers high linearity and reliability in RF applications.

Maximum Supply Current: 82 mA

Low supply current of 82 mA for efficient power consumption.

RF or Microwave Device Type: WIDE BAND LOW POWER

Wideband low power design for versatility and energy efficiency.

Characteristic Impedance: 50 ohm

Standard 50 ohm impedance for compatibility with most RF systems.

Gain: 11 dB

11 dB gain amplifies RF signals effectively for improved signal strength.

Minimum Operating Frequency: 0 MHz

Supports a minimum operating frequency of 0 MHz for a wide range of applications.

Mounting Feature: SURFACE MOUNT

Surface mountable for easy and secure mounting on PCBs.

Maximum Operating Frequency: 4000 MHz

Supports high-frequency operation up to 4000 MHz for various RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers HMC478ST89ETR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

11 dB

Maximum Input Power (CW):

5 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TO-243

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

82 mA

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC478ST89ETR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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