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SLR989A

Onsemi

SLR989A by Onsemi

SLR989A by Onsemi is an Infrared LED with a peak wavelength of 945nm and max forward current of 0.1A. It operates b/w -25 °C to 80°C, with a response time of 1µs. Ideal for applications requiring precise infrared illumination within a viewing angle of 20°.

Median Price

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Vyrian

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Digiode

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Problanco Electronics

Mexico . 5,968 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 859 parts In-Stock

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SupplyDigital Components

Austria . 577 parts In-Stock

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UHIMA Technologies

Türkiye . 460 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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Corphita

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Overview

Illuminate your world with the SLR989A Infrared LED by Onsemi. Crafted with precision and quality in mind, this cutting-edge product offers unmatched performance and reliability. Ideal for a wide range of applications, from security cameras to remote controls, this innovative technology provides enhanced visibility and accuracy. Experience the value and benefits of the SLR989A today and see the difference it can make in your projects. Trust Onsemi for all your LED needs.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low maximum forward current allows for efficient power utilization and reduces the risk of overheating, making this product energy-efficient and reliable.

Peak Wavelength (nm): 945

The peak wavelength of 945 nm offers a high level of sensitivity for infrared applications, ensuring accurate and reliable performance.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this product can withstand high temperatures, making it suitable for a variety of environments and applications.

Minimum Operating Temperature: -25 °C

The wide operating temperature range, starting from -25 °C, allows for reliable performance in both extreme cold and hot conditions.

Maximum Response Time: 0.000001 s

The ultra-fast maximum response time of 0.000001 seconds ensures quick and accurate detection, making this product ideal for time-sensitive applications.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5V provides protection against reverse polarity, enhancing the durability and longevity of the product.

Semiconductor Material: GaAs

The use of Gallium Arsenide (GaAs) semiconductor material ensures high performance and reliability, making this product a top choice for infrared LED applications.

Viewing Angle: 20°

The 20° viewing angle offers a wide coverage area, making this product suitable for applications that require broad illumination or detection.

Spectral Bandwidth: 45 m

The spectral bandwidth of 45m provides a precise and focused wavelength output, making this product ideal for applications that require specific spectral requirements.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation, ensuring stable placement of the product in various devices and equipment.

Maximum Forward Voltage: 1.5 V

With a low maximum forward voltage of 1.5V, this product offers efficient power consumption and helps in reducing energy costs in the long run.

Technical Specifications

Infrared LEDs SLR989A attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

45 m

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR989A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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