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SLR938C8

Onsemi

SLR938C8 by Onsemi

SLR938C8 by Onsemi is an Infrared LED with peak wavelength of 945nm, max forward current of 0.1A, and viewing angle of 23°. Ideal for applications requiring IR illumination in a temperature range from -25 °C to 80°C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 523 parts In-Stock

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Digiode

USA . 371 parts In-Stock

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TANS Electronics

Latvia . 7,545 parts In-Stock

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Kulean Microsystems

USA . 5,779 parts In-Stock

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Problanco Electronics

Mexico . 4,165 parts In-Stock

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Corphita

USA . 913 parts In-Stock

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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SupplyDigital Components

Austria . 515 parts In-Stock

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Corohmni

South Africa . 140 parts In-Stock

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Overview

Illuminate your world with the SLR938C8 by Onsemi, a leading manufacturer of cutting-edge technology. These high-quality Infrared LEDs offer a peak wavelength of 945nm, perfect for various applications. From security systems to medical devices, this product excels in delivering superior performance and reliability. With a maximum forward current of 0.1A and a wide viewing angle of 23°, the SLR938C8 provides exceptional value and functionality. Trust Onsemi to illuminate your path to success with the SLR938C8.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This product has a high maximum forward current, allowing it to handle a significant amount of power without getting damaged.

Peak Wavelength (nm): 945

With a peak wavelength of 945 nm, this product is suitable for applications where precise infrared emissions are required.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C ensures that this product can be used in a wide range of environments without overheating.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows this product to function even in cold conditions, making it versatile.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5 V protects the product from excess voltage in the reverse direction, enhancing its durability.

Semiconductor Material: GaAs

GaAs is a high-performance semiconductor material known for its efficiency and reliability, making this product a top choice for infrared LED applications.

Viewing Angle: 23°

The narrow viewing angle of 23° allows for concentrated and focused infrared emissions, ideal for specific targeting in various applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable installation, ensuring the longevity and efficient operation of this product.

Technical Specifications

Infrared LEDs SLR938C8 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Sub-Category:

Infrared LEDs

Viewing Angle:

23 deg

Trade Compliance

SLR938C8 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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