Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NXH80B120L2Q0SGQ0BOOST Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
SMBJ18CA
Meritek Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
NXP Semiconductors
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
1N4148
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N5819HW-7-F
Diodes Incorporated
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
KYOCERA AVX
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
FDV303N
Onsemi
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
Hy Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Goodwork Semiconductor
Daco Semiconductor
BSS138W-7-F
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
Harris Semiconductor
C0603X104K5RACAUTO
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
ABS25-32.768KHZ-T
Abracon
Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.
HGTG20N60A4D
HGTG20N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 28ns ton. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 150°C in a RECTANGULAR package style.
FGH40N60SMDF_F085
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Peak Reflow Temperature (C): NOT SPECIFIED;
IXDN55N120D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
FGD3040G2_F085
Fairchild Semiconductor's FGD3040G2_F085 is an N-CHANNEL IGBT with 23.2A IC, 390V VCE, and 150W Pd. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package suitable for surface mount assembly.
FGH40N60SFDTU_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
FS150R12KT4PBPSA1
Infineon Technologies
Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
STGP5H60DF
STMicroelectronics
STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.
IKP08N65H5XKSA1
IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.
7MBR150VR120-50
Fuji Electric
Fuji Electric's 7MBR150VR120-50 is an N-CHANNEL IGBT with 150A IC, 1200V VCE, and 885W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 390ns and low VCEsat of 2.95V, making it suitable for high-power systems requiring efficient switching capabilities.
IXGH16N170A
Littelfuse
The Littelfuse IXGH16N170A is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 16A. It has a nominal turn-off time of 330ns, making it ideal for motor control applications requiring high power dissipation up to 190W. The package style is flange mount with a rectangular shape and through-hole terminals.
IRG4PH50UDPBF
IRG4PH50UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a collector current of 45A. It has a nominal turn-off time of 570ns and turn-on time of 73ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals and built-in diode, suitable for flange mount installations.
F4-75R06W1E3
F4-75R06W1E3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 275W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 45ns and low toff of 330ns. The COMPLEX configuration and RECTANGULAR package make it suitable for high-power systems requiring efficient switching capabilities.
FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109 by Onsemi is an N-CHANNEL IGBT with 90 ns rise time, 180 ns fall time, and 312 W power dissipation. Ideal for high-power applications requiring a max collector-emitter voltage of 1200 V and a collector current of 50 A. Operating temperature up to 150°C makes it suitable for industrial use.
SGL50N60RUFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
IKQ75N120CT2XKSA1
IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.
FZ600R17KE3S4HOSA1
Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
FB30R06W1E3_B1
FB30R06W1E3_B1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max VCEsat of 2V. It is designed for power control applications, offering a nominal turn off time of 245ns and a max collector-emitter voltage of 600V. With a package style of FLANGE MOUNT, it can handle up to 115W power dissipation at a max operating temperature of 175°C.
STGW45HF60WDI
STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.
IKW25N120T2FKSA1
IKW25N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 504ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and SILICON transistor element material. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
IGW08T120
IGW08T120 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It is designed for power control applications, featuring a nominal turn-off time of 710ns and a max power dissipation of 70W. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic systems.
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NXH80T120L3Q0P3G
N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED;
NXH80B120L2Q0SNG
N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 103 W; Maximum Collector Current (IC): 41 A; Transistor Element Material: SILICON;
NXH80B120H2Q0SG
N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 103 W; Maximum Collector Current (IC): 41 A; Package Style (Meter): FLANGE MOUNT;
NXH80T120L2Q0S2TG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Maximum Collector Current (IC): 67 A; Minimum Operating Temperature: -40 Cel;
NXH80T120L2Q0PG
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum VCEsat: 2.8 V; Maximum Operating Temperature: 150 Cel;
NXH80B120L2Q0SG
NXH80T120L3Q0S3G
N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 75 A; Package Body Material: UNSPECIFIED;
NXH800A100L4Q2F2P2G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 309 A; Minimum Operating Temperature: -40 Cel;
NXH80T120L2Q0P2G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Maximum Collector Current (IC): 67 A; Peak Reflow Temperature (C): NOT SPECIFIED;
NXH80B120H2Q0SGQ0BOOST
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 103 W; Maximum Collector Current (IC): 41 A; Case Connection: ISOLATED;
NXH80T120L2Q0S2G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Maximum Collector Current (IC): 67 A; Package Body Material: UNSPECIFIED;
NXH80T120L2Q0S1G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 57 A; JESD-30 Code: R-XUFM-X18;
NXH80B120H2Q0SNGQ0BOOST
N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 103 W; Maximum Collector Current (IC): 41 A; Transistor Element Material: SILICON;
NXH80T120L2Q0SG
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
NXH800A100L4Q2F2S2G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 309 A; Maximum Collector-Emitter Voltage: 1000 V;
NXH800A100L4Q2F2P1G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 309 A; Maximum Gate-Emitter Voltage: 20 V;
NXH800A100L4Q2F2S1G
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 309 A; JESD-30 Code: R-XUFM-P17;
NXH80B120H2Q0SNG
Insulated Gate Bipolar Transistors; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3;
NXH80T120L2Q0S1GQ0PACK
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