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NTTFS4C10NTWG

Onsemi

NTTFS4C10NTWG by Onsemi

NTTFS4C10NTWG by Onsemi is a N-CHANNEL FET with 44A max drain current and 23.6W power dissipation. Ideal for high-power applications, it operates at up to 150°C with surface mount configuration for efficient heat dissipation.

Median Price

$0.483

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,995 parts In-Stock

1+ parts

$0.910

100+ parts

$0.582

1k+ parts

$0.378

10k+ parts

$0.343

4,995

$0.910

$0.582

$0.378

$0.343

Rochester

USA . 16,400 parts In-Stock

1+ parts

-

100+ parts

$0.466

1k+ parts

$0.386

10k+ parts

$0.344

16,400

-

$0.466

$0.386

$0.344

Verical

USA . 16,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.483

10k+ parts

$0.431

16,400

-

-

$0.483

$0.431

DigiKey

USA . 143 parts In-Stock

1+ parts

-

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-

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143

-

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-

Distributors (In-Stock)

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Digiode

USA . 962 parts In-Stock

1+ parts

$0.362

100+ parts

-

1k+ parts

-

10k+ parts

-

962

$0.362

-

-

-

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.455

100+ parts

-

1k+ parts

-

10k+ parts

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700

$0.455

-

-

-

Chip Stock

USA . 27,000 parts In-Stock

1+ parts

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27,000

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-

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Vyrian

USA . 9,093 parts In-Stock

1+ parts

-

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9,093

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 9,509 parts In-Stock

1+ parts

$0.324

100+ parts

$0.316

1k+ parts

$0.314

10k+ parts

-

9,509

$0.324

$0.316

$0.314

-

Ampacity Inc.

Singapore . 9,249 parts In-Stock

1+ parts

$0.324

100+ parts

-

1k+ parts

-

10k+ parts

-

9,249

$0.324

-

-

-

Corphita

USA . 482 parts In-Stock

1+ parts

$0.343

100+ parts

-

1k+ parts

-

10k+ parts

-

482

$0.343

-

-

-

Corohmni

South Africa . 76 parts In-Stock

1+ parts

$0.381

100+ parts

-

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-

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76

$0.381

-

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-

Continental Prestige Electronics

USA . 5,176 parts In-Stock

1+ parts

$0.421

100+ parts

-

1k+ parts

-

10k+ parts

$0.413

5,176

$0.421

-

-

$0.413

Argo Parts USA

USA . 4,142 parts In-Stock

1+ parts

$0.421

100+ parts

-

1k+ parts

-

10k+ parts

$0.409

4,142

$0.421

-

-

$0.409

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.446

100+ parts

-

1k+ parts

$0.428

10k+ parts

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100

$0.446

-

$0.428

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.456

100+ parts

$0.456

1k+ parts

$0.456

10k+ parts

-

100

$0.456

$0.456

$0.456

-

Aztec Data Supply Inc.

USA . 4,809 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

-

10k+ parts

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4,809

$0.540

-

-

-

Microchip USA

USA . 2,794 parts In-Stock

1+ parts

$2.340

100+ parts

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1k+ parts

-

10k+ parts

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2,794

$2.340

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Lixinc

USA . 12,850 parts In-Stock

1+ parts

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12,850

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Kulean Microsystems

USA . 6,748 parts In-Stock

1+ parts

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6,748

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SupplyDigital Components

Austria . 6,696 parts In-Stock

1+ parts

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6,696

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Problanco Electronics

Mexico . 2,337 parts In-Stock

1+ parts

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2,337

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UHIMA Technologies

Türkiye . 335 parts In-Stock

1+ parts

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335

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TANS Electronics

Latvia . 288 parts In-Stock

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288

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Overview

Discover the NTTFS4C10NTWG by Onsemi, a high-quality N-CHANNEL Small Signal Field Effect Transistor (FET) that offers exceptional performance in a variety of applications. With a maximum drain current of 44A and a maximum power dissipation of 23.6W, this single-configured FET is perfect for demanding projects. Trust in Onsemi's reliable manufacturing and cutting-edge technology to deliver top-notch products that exceed expectations. Upgrade your designs with the NTTFS4C10NTWG and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used for high voltage applications, making this product suitable for a variety of circuits requiring high voltage capabilities.

Configuration: SINGLE

Single configuration FETs are easier to design and work with compared to dual or multiple configurations, making this product user-friendly for circuit design.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto circuit boards, making this product suitable for space-constrained applications.

Maximum Drain Current (Abs) (ID): 44 A

With a high maximum drain current, this product can handle high currents efficiently, making it suitable for power applications.

Maximum Power Dissipation (Abs): 23.6 W

The high maximum power dissipation capability of this FET allows it to handle heat efficiently, making it suitable for applications requiring high power.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability, making this product a durable and stable choice for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures, making it suitable for applications in harsh environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides good solderability and electrical conductivity, ensuring reliable connections in circuits.

Maximum Time At Peak Reflow Temperature (s): 30

With a short time at peak reflow temperature, this product minimizes the risk of damage during soldering processes, ensuring its reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of this FET allows for robust soldering processes, ensuring secure connections in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTFS4C10NTWG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

44 A

Maximum Drain Current (ID):

44 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTTFS4C10NTWG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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