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NTTFD1D8N02P1E

Onsemi

NTTFD1D8N02P1E by Onsemi

NTTFD1D8N02P1E by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and common source configuration. It operates in enhancement mode for switching applications. Features include max drain current of 61A, min operating temp -55 °C, and max power dissipation of 36W.

Median Price

$0.861

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,900 parts In-Stock

1+ parts

$0.861

100+ parts

$0.696

1k+ parts

$0.673

10k+ parts

-

2,900

$0.861

$0.696

$0.673

-

Mouser Electronics

USA . 3,000 parts In-Stock

1+ parts

$2.250

100+ parts

$0.979

1k+ parts

-

10k+ parts

-

3,000

$2.250

$0.979

-

-

Rochester

USA . 188,025 parts In-Stock

1+ parts

-

100+ parts

$0.837

1k+ parts

$0.695

10k+ parts

$0.619

188,025

-

$0.837

$0.695

$0.619

Verical

USA . 188,025 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.868

10k+ parts

$0.774

188,025

-

-

$0.868

$0.774

DigiKey

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.450

21,000

-

-

-

$0.450

Flip Electronics (Authorized)

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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21,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,148 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

-

10k+ parts

-

2,148

$0.640

-

-

-

Digiode

USA . 697 parts In-Stock

1+ parts

$0.651

100+ parts

-

1k+ parts

-

10k+ parts

-

697

$0.651

-

-

-

Chip Stock

USA . 68,000 parts In-Stock

1+ parts

-

100+ parts

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68,000

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-

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Flip Electronics

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

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48,000

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,050 parts In-Stock

1+ parts

$0.616

100+ parts

-

1k+ parts

-

10k+ parts

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2,050

$0.616

-

-

-

Corohmni

South Africa . 154 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

-

10k+ parts

-

154

$0.640

-

-

-

Component Stockers USA

USA . 56,447 parts In-Stock

1+ parts

$0.710

100+ parts

$0.660

1k+ parts

$0.600

10k+ parts

$0.600

56,447

$0.710

$0.660

$0.600

$0.600

Problanco Electronics

Mexico . 7,731 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,731

-

-

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Kulean Microsystems

USA . 7,564 parts In-Stock

1+ parts

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7,564

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SupplyDigital Components

Austria . 2,900 parts In-Stock

1+ parts

-

100+ parts

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2,900

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TANS Electronics

Latvia . 1,148 parts In-Stock

1+ parts

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100+ parts

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1,148

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UHIMA Technologies

Türkiye . 357 parts In-Stock

1+ parts

-

100+ parts

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357

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Overview

Unleash the power of cutting-edge technology with the NTTFD1D8N02P1E by Onsemi. This high-quality Small Signal Field Effect Transistor (FET) offers unmatched performance and reliability for a wide range of switching applications. With its N-CHANNEL polarity, COMMON SOURCE configuration, and built-in diode, this transistor is designed to deliver exceptional results. Say goodbye to compromise and hello to efficiency with the NTTFD1D8N02P1E - the ultimate solution for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external elements, ensuring a longer lifespan for the transistor.

Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

The common source configuration with built-in diode allows for efficient switching and improved performance in various applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring fast and reliable performance in on/off operations.

Surface Mount: YES

Surface mount capability makes it easy to integrate into circuit boards, saving space and simplifying assembly.

Maximum Drain Current (ID): 61 A

High maximum drain current allows for handling of large currents, making it suitable for applications requiring high power.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding operating conditions without degradation in performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTTFD1D8N02P1E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

61 A

Maximum Drain-Source On Resistance:

.0053 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTTFD1D8N02P1E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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