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NRVUB1620CTT4G

Onsemi

NRVUB1620CTT4G by Onsemi

NRVUB1620CTT4G by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high efficiency. It features a max reverse recovery time of 0.035 us, max forward voltage of 0.975 V, and can handle a max output current of 8 A. Ideal for use in electronics operating b/w -65 to 175 °C, this rectifier diode has a peak reflow temperature of 260 °C and meets AEC-Q101 standards.

Median Price

$0.478

Lifecycle Status

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8

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1k+

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Arrow

USA . 39,200 parts In-Stock

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Verical

USA . 39,200 parts In-Stock

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Rochester

USA . 60 parts In-Stock

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$1.400

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$1.160

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$1.040

60

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$1.400

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$1.040

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Vyrian

USA . 6,406 parts In-Stock

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Digiode

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J2 Sourcing AB

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Bristol Electronics

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Advanced Electronics

New Zealand . 54 parts In-Stock

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$0.229

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$0.208

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$0.188

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Corohmni

South Africa . 372 parts In-Stock

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$2.816

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AZTECH Wire

Italy . 913 parts In-Stock

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TANS Electronics

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SupplyDigital Components

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Formix International (Excess)

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Problanco Electronics

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Kepictronics

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Overview

Discover the NRVUB1620CTT4G by Onsemi, a top-quality diode with ultra-fast recovery power, perfect for various applications. Manufactured by Onsemi, a reputable company known for its reliability and innovation in the industry, this diode offers a common cathode configuration with two elements, providing superior performance. With a maximum reverse recovery time of 0.035 us and maximum output current of 8A, this diode ensures efficiency and stability. Whether you're working on automotive, industrial, or consumer electronics projects, this diode is the perfect choice for your needs. Unlock the potential of your designs with the NRVUB1620CTT4G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, increasing durability and reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and space.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time ensures efficient and high-speed switching performance.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves overall efficiency.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance in various environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC, making this product suitable for power applications.

Technical Specifications

Diodes & Rectifiers NRVUB1620CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUB1620CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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