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NLX2G14AMX1TCG

Onsemi

NLX2G14AMX1TCG by Onsemi

NLX2G14AMX1TCG by Onsemi is a CMOS Logic Gate with 2 functions, 9.1 ns propagation delay at 2.3V. Ideal for military applications due to its Schmitt Trigger feature and wide operating temperature range (-55 to 125 °C).

Median Price

$10.250

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip1Stop

Japan . 42 parts In-Stock

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$10.250

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Digiode

USA . 910 parts In-Stock

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$9.738

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910

$9.738

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Chip Stock

USA . 23,120 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 135 parts In-Stock

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Vigor

Singapore . 340 parts In-Stock

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$0.070

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340

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Corphita

USA . 334 parts In-Stock

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$9.225

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Corohmni

South Africa . 429 parts In-Stock

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AZTECH Wire

Italy . 697 parts In-Stock

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$12.400

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RC Electronics

USA . 124,393 parts In-Stock

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Kepictronics

USA . 10,380 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 5,333 parts In-Stock

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Problanco Electronics

Mexico . 4,755 parts In-Stock

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SupplyDigital Components

Austria . 4,657 parts In-Stock

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Assy Fe

Spain . 2,490 parts In-Stock

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TANS Electronics

Latvia . 2,076 parts In-Stock

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Futuretech Components

Singapore . 540 parts In-Stock

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Microchip USA

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S.R.D Solutions

India . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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Overview

Discover the NLX2G14AMX1TCG by Onsemi, a premium quality Logic Gates product designed to cater to your specific needs. With its advanced technology and durable construction, this versatile component offers unparalleled performance in various applications. Trust in Onsemi's reputation for excellence and innovation as you unlock the countless benefits and advantages that this product brings to your projects. Find reliability, efficiency, and superior functionality all in one compact and powerful package. Elevate your work with the NLX2G14AMX1TCG and experience the difference that top-tier components can make in your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product ideal for portable or rugged applications.

Propagation Delay At Nominal Supply: 9.1 ns

Fast propagation delay ensures quick response times in processing signals, making the product efficient for high-speed applications.

Surface Mount: YES

Surface mount packaging allows for easy and efficient assembly onto circuit boards, saving space and reducing overall product size.

No. of Functions: 2

Having multiple functions in a single component saves board space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 2.3

The nominal supply voltage is within a commonly used range, making it compatible with various systems and power sources.

Load Capacitance (CL): 15 pF

Low load capacitance helps reduce signal distortion and ensure accurate processing of input signals.

Power Supplies (V): 1.8/5

Support for multiple power supply voltages allows for flexibility in system integration and compatibility with different power sources.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable operation even in demanding environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables the product to function effectively in both extreme cold and hot environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable for signal processing.

Technical Specifications

Logic Gates NLX2G14AMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

9.1 ns

Propagation Delay (tpd):

9.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX2G14AMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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