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NLV18VHC1G32DFT2G

Onsemi

NLV18VHC1G32DFT2G by Onsemi

NLV18VHC1G32DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 13.5ns propagation delay at 5V. Operating b/w -55 to 125 °C, it has a load capacitance of 50pF and supports AEC-Q100 screening level. Ideal for military applications due to its small outline package style and dual terminal position.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 195,000 parts In-Stock

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-

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$0.085

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$0.070

10k+ parts

$0.063

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$0.085

$0.070

$0.063

Verical

USA . 195,000 parts In-Stock

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$0.079

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$0.079

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Flip Electronics

USA . 195,000 parts In-Stock

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Vyrian

USA . 5,503 parts In-Stock

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Digiode

USA . 772 parts In-Stock

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Vigor

Singapore . 501 parts In-Stock

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$0.100

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501

$0.100

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AZTECH Wire

Italy . 71 parts In-Stock

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$14.280

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QUARKTWIN TECHNOLOGY LTD

USA . 15,231 parts In-Stock

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Kulean Microsystems

USA . 8,098 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,389 parts In-Stock

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Corphita

USA . 960 parts In-Stock

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Problanco Electronics

Mexico . 438 parts In-Stock

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Corohmni

South Africa . 387 parts In-Stock

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UHIMA Technologies

Türkiye . 335 parts In-Stock

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SupplyDigital Components

Austria . 147 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic projects with the NLV18VHC1G32DFT2G by Onsemi, a top-quality logic gate that offers seamless integration and reliable performance. Manufactured by Onsemi, a trusted name in the industry known for their cutting-edge technology and innovation, this logic gate is perfect for a wide range of applications. Whether you're working on automotive electronics, consumer electronics, or industrial automation, this product delivers exceptional value with its fast propagation delay, low power consumption, and high output characteristics. Upgrade your projects today with the NLV18VHC1G32DFT2G and experience the difference in quality and efficiency that sets Onsemi products apart from the rest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external elements, making the product suitable for various environmental conditions.

Propagation Delay At Nominal Supply: 13.5 ns

Low propagation delay ensures fast signal processing and efficient operation of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

No. of Inputs: 2

Having two inputs allows for versatile logic operations and flexibility in designing complex electronic circuits.

Nominal Supply Voltage / Vsup (V): 5

Operating at a commonly used voltage of 5V ensures compatibility with a wide range of electronic systems.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various logic families, making the product efficient and versatile.

Technical Specifications

Logic Gates NLV18VHC1G32DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Propagation Delay At Nominal Supply:

13.5 ns

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV18VHC1G32DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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