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NLV18VHC1G125DFT2G

Onsemi

NLV18VHC1G125DFT2G by Onsemi

NLV18VHC1G125DFT2G by Onsemi is a 5-terminal logic gate with 13.5ns propagation delay at 5V, suitable for AEC-Q100 applications. It features a small outline package with 1.25mm width and operates b/w -55 to 125 °C, making it ideal for military-grade CMOS technology requirements.

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1k+

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Vyrian

USA . 11,472 parts In-Stock

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Digiode

USA . 1,468 parts In-Stock

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Vigor

Singapore . 560 parts In-Stock

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AZTECH Wire

Italy . 139 parts In-Stock

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Problanco Electronics

Mexico . 6,526 parts In-Stock

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Kulean Microsystems

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Corphita

USA . 1,529 parts In-Stock

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SupplyDigital Components

Austria . 1,167 parts In-Stock

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TANS Electronics

Latvia . 545 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 347 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the power of cutting-edge technology with the NLV18VHC1G125DFT2G by Onsemi. Crafted with precision and expertise, this logic gate from a trusted manufacturer offers unparalleled quality and reliability. Ideal for a wide range of applications, this product provides fast propagation delay and 3-state output characteristics. With a nominal supply voltage of 5V and maximum operating temperature of 125 °C, it delivers exceptional performance in challenging environments. Elevate your projects with the NLV18VHC1G125DFT2G and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the logic gate, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 13.5 ns

Low propagation delay ensures fast operation and response times, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage, this logic gate can easily be integrated into existing circuits and systems.

Output Characteristics: 3-STATE

3-STATE output characteristics provide flexibility in controlling the output signal, allowing for a tristate output and enhancing the versatility of the logic gate.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NLV18VHC1G125DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Propagation Delay At Nominal Supply:

13.5 ns

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV18VHC1G125DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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