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NLV14052BCPG

Onsemi

NLV14052BCPG by Onsemi

NLV14052BCPG by Onsemi is a CMOS differential multiplexer with 4 channels. It operates at -55 to 125 °C and has a max on-state resistance of 1200 ohm. Suitable for military-grade applications, it features an in-line package style with 16 terminals in a rectangular shape made of plastic/epoxy material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,260 parts In-Stock

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Vyrian

USA . 1,940 parts In-Stock

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1,940

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Problanco Electronics

Mexico . 8,305 parts In-Stock

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8,305

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SupplyDigital Components

Austria . 5,827 parts In-Stock

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5,827

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TANS Electronics

Latvia . 5,711 parts In-Stock

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Kulean Microsystems

USA . 5,470 parts In-Stock

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5,470

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Corphita

USA . 1,960 parts In-Stock

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1,960

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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Corohmni

South Africa . 175 parts In-Stock

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Overview

Discover the NLV14052BCPG by Onsemi, a high-quality multiplexer that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this versatile device is perfect for a wide range of applications. With its durable plastic/epoxy package body material and military-grade temperature rating, the NLV14052BCPG ensures optimal functionality even in extreme conditions. Featuring 4 channels, dual terminal position, and CMOS technology, this differential multiplexer delivers efficient signal switching with minimal resistance. Experience the value and benefits of the NLV14052BCPG for your next project. Upgrade to Onsemi for superior quality and performance!

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Power Supplies (V) 5/15

Offers flexibility in power input which allows for compatibility with different systems and applications.

No. of Terminals 16

Sufficient number of terminals for connecting multiple channels or components.

Maximum Operating Temperature 125 °C

Can operate at high temperatures without malfunctioning, ensuring reliability in demanding conditions.

Technology CMOS

Uses CMOS technology for low power consumption, making it efficient and cost-effective.

Technical Specifications

Multiplexers & Switches NLV14052BCPG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

16

Maximum On-state Resistance (Ron):

1200 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Surface Mount:

NO

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

NLV14052BCPG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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