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NLV14051BCPG

Onsemi

NLV14051BCPG by Onsemi

NLV14051BCPG by Onsemi is an 8-channel single-ended multiplexer with a max on-state resistance of 1200 ohm. Operating at temperatures from -55 to 125 °C, it has a power supply range of 5/15 V and uses CMOS technology. Ideal for military-grade applications requiring break-before-make switching in an inline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 956 parts In-Stock

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Digiode

USA . 235 parts In-Stock

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Kulean Microsystems

USA . 7,240 parts In-Stock

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SupplyDigital Components

Austria . 6,655 parts In-Stock

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Problanco Electronics

Mexico . 5,325 parts In-Stock

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TANS Electronics

Latvia . 2,849 parts In-Stock

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Corphita

USA . 1,577 parts In-Stock

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UHIMA Technologies

Türkiye . 359 parts In-Stock

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Corohmni

South Africa . 184 parts In-Stock

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Overview

Enhance your electronic designs with the NLV14051BCPG by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This multiplexer offers a wide range of applications in various industries, providing customers with unparalleled value and benefits. With its advanced technology and military-grade temperature grade, this product guarantees optimal performance and durability. Elevate your projects with the NLV14051BCPG and experience the advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the internal components of the multiplexer.

Power Supplies (V): 5/15

Allows flexibility in power options, making it compatible with a variety of systems.

No. of Terminals: 16

Sufficient number of terminals for connecting multiple input and output devices.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring reliable operation in diverse environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall performance.

Technical Specifications

Multiplexers & Switches NLV14051BCPG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Maximum On-state Resistance (Ron):

1200 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Surface Mount:

NO

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

NLV14051BCPG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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