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NLU1GT86BMX1TCG

Onsemi

NLU1GT86BMX1TCG by Onsemi

NLU1GT86BMX1TCG by Onsemi is a CMOS Logic Gate with 2 inputs, 19.5 ns propagation delay, and 50 pF load capacitance. Ideal for military applications due to its small outline package style and wide operating temperature range from -55 to 125 °C.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,700 parts In-Stock

1+ parts

$0.563

100+ parts

$0.179

1k+ parts

$0.138

10k+ parts

-

2,700

$0.563

$0.179

$0.138

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Rochester

USA . 159,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

159,000

-

$0.092

$0.077

$0.068

Verical

USA . 159,000 parts In-Stock

1+ parts

-

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$0.086

159,000

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$0.086

Distributors (In-Stock)

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Digiode

USA . 266 parts In-Stock

1+ parts

$0.072

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266

$0.072

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Vyrian

USA . 3,967 parts In-Stock

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3,967

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Corphita

USA . 541 parts In-Stock

1+ parts

$0.068

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541

$0.068

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Vigor

Singapore . 476 parts In-Stock

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$0.070

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476

$0.070

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Corohmni

South Africa . 399 parts In-Stock

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$0.076

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399

$0.076

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Component Stockers USA

USA . 185,982 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

185,982

$0.080

$0.070

$0.070

$0.070

AZTECH Wire

Italy . 903 parts In-Stock

1+ parts

$18.970

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903

$18.970

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Continental Prestige Electronics

USA . 159,000 parts In-Stock

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$0.066

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159,000

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$0.066

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Perfect Parts

USA . 18,312 parts In-Stock

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18,312

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SupplyDigital Components

Austria . 7,774 parts In-Stock

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TANS Electronics

Latvia . 6,534 parts In-Stock

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6,534

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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GreenTree Electronics

Israel . 2,700 parts In-Stock

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2,700

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Kulean Microsystems

USA . 2,023 parts In-Stock

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2,023

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Problanco Electronics

Mexico . 485 parts In-Stock

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485

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Microchip USA

USA . 356 parts In-Stock

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356

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UHIMA Technologies

Türkiye . 233 parts In-Stock

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233

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Overview

Discover the NLU1GT86BMX1TCG by Onsemi, a high-quality logic gate that offers fast propagation delay and low power consumption. Manufactured by Onsemi, a renowned leader in semiconductor technology, this product is ideal for various applications. Whether you need to enhance signal processing or improve circuit efficiency, this logic gate delivers exceptional performance. With a compact design and reliable functionality, the NLU1GT86BMX1TCG provides customers with value, efficiency, and versatility in a single package. Experience the benefits of superior technology with this innovative solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides excellent protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 19.5 ns

Fast propagation delay ensures quick response times in signal processing applications.

Surface Mount: YES

Enables easy and secure installation on circuit boards, saving space and reducing assembly time.

No. of Inputs: 2

Suitable for basic logic operations requiring two input signals.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies commonly used in electronic devices.

Load Capacitance (CL): 50 pF

Optimized for handling a moderate load capacitance, ensuring stable and reliable performance.

Maximum Operating Temperature: 125 °C

High maximum operating temperature makes this product suitable for a wide range of environments and applications.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of voltages.

Technical Specifications

Logic Gates NLU1GT86BMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

19.5 ns

Propagation Delay (tpd):

19.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLU1GT86BMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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