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NLU1G07CMX1TCG

Onsemi

NLU1G07CMX1TCG by Onsemi

NLU1G07CMX1TCG by Onsemi is a CMOS Logic Gate with 14.5ns Propagation Delay, suitable for military applications. It operates at a supply voltage range of 1.65V to 5.5V and has an open-drain output characteristic. This surface-mount device comes in a small outline package with very thin profile, making it ideal for compact electronic designs.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 200,985 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

200,985

-

$0.119

$0.099

$0.088

Verical

USA . 125,985 parts In-Stock

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-

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$0.110

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$0.110

Distributors (In-Stock)

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Digiode

USA . 808 parts In-Stock

1+ parts

$0.093

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808

$0.093

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Vyrian

USA . 9,218 parts In-Stock

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9,218

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Distributors (Availability)

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Corphita

USA . 1,869 parts In-Stock

1+ parts

$0.088

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$0.088

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Vigor

Singapore . 178 parts In-Stock

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$0.090

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178

$0.090

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Corohmni

South Africa . 183 parts In-Stock

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$0.098

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183

$0.098

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Component Stockers USA

USA . 255,696 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

255,696

$0.100

$0.090

$0.080

$0.080

AZTECH Wire

Italy . 509 parts In-Stock

1+ parts

$16.270

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509

$16.270

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Continental Prestige Electronics

USA . 200,985 parts In-Stock

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$0.085

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$0.085

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Problanco Electronics

Mexico . 7,095 parts In-Stock

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Kulean Microsystems

USA . 4,841 parts In-Stock

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SupplyDigital Components

Austria . 4,565 parts In-Stock

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TANS Electronics

Latvia . 1,791 parts In-Stock

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Microchip USA

USA . 390 parts In-Stock

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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Overview

Unleash the power of efficient logic gates with the NLU1G07CMX1TCG by Onsemi. Built with precision and reliability in mind, this product offers a seamless solution for a wide range of applications. Its high-quality construction and advanced technology ensure optimal performance, while its compact design makes it easy to integrate into any project. Trust Onsemi's expertise in the field of semiconductor manufacturing to deliver superior products that provide value and benefits to customers. Experience the difference with the NLU1G07CMX1TCG and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and resistance to external elements, making this product suitable for a wide range of applications.

Propagation Delay At Nominal Supply: 14.5 ns

Low propagation delay ensures fast signal processing, making this logic gate efficient for time-sensitive applications.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common nominal supply voltage of 5V, compatible with many electronic systems.

Load Capacitance (CL): 50 pF

Suitable for driving loads with capacitance up to 50 pF, making it versatile for various electronic circuits.

Power Supplies (V): 1.8/5

Supports dual power supplies of 1.8V and 5V, allowing for flexibility in different operating conditions.

No. of Terminals: 6

Six terminals offer multiple connection points for interfacing with other components, enhancing the versatility of this logic gate.

Maximum I (ol): 4 Amp

High maximum output current of 4A allows for driving of larger loads, increasing the applicability of this logic gate.

Output Characteristics: OPEN-DRAIN

Open-drain output configuration provides flexibility in designing circuitry and interfacing with different components.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliability and operation in harsh environments, making this logic gate suitable for demanding applications.

Technical Specifications

Logic Gates NLU1G07CMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

14.5 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLU1G07CMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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